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InP DHBT Distribute...
InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth
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- Eriksson, Klas, 1983 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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Darwazeh, I.Z. (författare)
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- Zirath, Herbert, 1955 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2015
- 2015
- Engelska.
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 63:4, s. 1334-1341
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Abstract
Ämnesord
Stäng
- Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed and measured. The amplifiers use different types of distributed amplifier (DA) topologies, all based on cascode gain cells. A single-stage DA design achieves 7.5-dB gain and 192-GHz bandwidth and a two-cascaded single-stage DA achieves an average gain of 16 dB with a bandwidth of 235 GHz. The third circuit is a conventional DA with more than 10-dB gain from 70 kHz up to 180 GHz. To the authors' best knowledge, the single-stage DA and the two-cascaded single-stage DA are the widest band amplifiers in any technology reported to date. Furthermore, the conventional DA has a record bandwidth for circuits in conventional DA topology with gain from near dc.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- heterojunction bipolar transistors (HBTs)
- indium-phosphide (InP)
- wideband amplifiers
- Distributed amplifiers (DAs)
- noise figure
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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