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On the relation bet...
On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs
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- Li, Junjie, 1995 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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Pourkabirian, Arsalan, 1983 (författare)
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Bergsten, Johan, 1988 (författare)
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Wadefalk, Niklas, 1973 (författare)
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- Grahn, Jan, 1962 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2022
- 2022
- Engelska.
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Ingår i: Asia-Pacific Microwave Conference Proceedings, APMC. ; 2022-November, s. 10-12
- Relaterad länk:
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https://research.cha... (primary) (free)
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Abstract
Ämnesord
Stäng
- 4 - 8 GHz low-noise amplifiers (LNAs) based on InP high electron mobility transistors (InP HEMTs) with different spacer thickness in the InAlAs-InGaAs heterostructure were fabricated and characterized at 5 K. A variation in the lowest average noise temperature of the LNA was observed with spacer thickness. We here report that the subthreshold swing (SS) at 5 K for the HEMT exhibited similar dependence with spacer thickness as the lowest average noise temperature of the LNA. This suggests that low-temperature characterization of SS for the HEMT can be used as a rapid assessment of anticipated noise performance in the cryogenic HEMT LNA.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Nyckelord
- InP HEMT
- subthreshold swing
- low-noise amplifier
- noise
- Cryogenic
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)