Sökning: onr:"swepub:oai:research.chalmers.se:77f6ba1e-ad19-436e-a4e1-d9ec97b02ba0" >
Probing resistive s...
Probing resistive switching in HfO 2 /Al 2 O 3 bilayer oxides using in-situ transmission electron microscopy
-
- Ranjan, Alok, 1992 (författare)
- Singapore University of Technology and Design,Chalmers tekniska högskola,Chalmers University of Technology
-
- Xu, Hejun (författare)
- East China Normal University
-
- Wang, Chaolun (författare)
- East China Normal University
-
visa fler...
-
- Molina, Joel (författare)
- Instituto Nacional de Astrofísica, Óptica y Electrońica (INAOE),National Institute of Astrophysics, Optics and Electronics (INAOE)
-
- Wu, Xing (författare)
- East China Normal University
-
Zhang, Hui (författare)
-
Sun, Litao (författare)
-
- Chu, Junhao (författare)
- East China Normal University
-
- Pey, Kin Leong (författare)
- Singapore University of Technology and Design
-
visa färre...
-
(creator_code:org_t)
- Elsevier BV, 2023
- 2023
- Engelska.
-
Ingår i: Applied Materials Today. - : Elsevier BV. - 2352-9407. ; 31
- Relaterad länk:
-
https://research.cha... (primary) (free)
-
visa fler...
-
https://doi.org/10.1...
-
https://research.cha...
-
visa färre...
Abstract
Ämnesord
Stäng
- In this work, we investigate the resistive switching in hafnium dioxide (HfO2) and aluminum oxide (Al2O3) bilayered stacks using in-situ transmission electron microscopy and X-ray energy dispersive spectroscopy. Conductance of the HfO2/Al2O3 stack changes gradually upon electrical stressing which is related to the formation of extended nanoscale physical defects at the HfO2/Al2O3 interface and the migration and re-crystallization of Al into the oxide bulk. The results suggest two competing physical mechanisms including the redistribution of oxygen ions and the migration of Al species from the Al electrode during the switching process. While the HfO2/Al2O3 bilayered stack appears to be a good candidate for RRAM technology, the low diffusion barrier of the active Al electrode causes severe Al migration in the bi-layered oxides leading to the device to fail in resetting, and thereby, largely limiting the overall switching performance and material reliability.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Reliability
- Resistive Memory
- Diffusion Barrier
- TEM
- Metal migration
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas
- Av författaren/redakt...
-
Ranjan, Alok, 19 ...
-
Xu, Hejun
-
Wang, Chaolun
-
Molina, Joel
-
Wu, Xing
-
Zhang, Hui
-
visa fler...
-
Sun, Litao
-
Chu, Junhao
-
Pey, Kin Leong
-
visa färre...
- Om ämnet
-
- NATURVETENSKAP
-
NATURVETENSKAP
-
och Fysik
-
och Den kondenserade ...
- Artiklar i publikationen
-
Applied Material ...
- Av lärosätet
-
Chalmers tekniska högskola