Residual and oscillator phase noise in GaAs metamorphic HEMTs

• Residual phase noise measurements have been carriedout on GaAs metamorphic high electron mobility transistors,mHEMT in order to explain phase noise results from mHEMTbased VCOs. Noise is measured for several biases and inputpowers. The measurements show that the residual phase noiseis increasing with increasing drain source voltages even insaturation, possibly due to the triggering of impact ionization mechanisms. This increase in noise will act deleterious on the phase noise performance of a VCO that have the drain bias increased in order to achieve higher power in the tank and thus reduce the phase noise. The reduction in phase noise due to higher power in the tank is shown to be counteracted by the increase in residual phase noise from the mHEMTs for higher drain source voltages.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

1/f noise

residual phase noise

mHEMT

VCO

HEMT

Publikations- och innehållstyp

art (ämneskategori)

ref (ämneskategori)