A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire

• We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from - 0.5 to at least 1.8 V. The charge sensitivity was measured to 32 mu e(rms) Hz (- 1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 mu e(rms) Hz (- 1/2). At low frequencies this device showed a typical 1/f noise behavior, with a level extrapolated to 300 mu e(rms) Hz (- 1/2) at 10 Hz.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology -- Nano-technology (hsv//eng)

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