Tuning light absorption by band gap engineering in ZnCdO as a function of MOVPE-synthesis conditions and annealing

• Options of flow rate and growth temperature variations were investigated in order to reveal limitations for single phase wurtzite ZnCdO synthesis by atmospheric pressure metal organic vapor phase epitaxy (MOVPE). It is found that in spite of efficient Cd incorporation (up to 60%), the wurtzite phase and the corresponding single step absorption threshold dominate only up to a Cd content

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

Phase separation

vapor phase epitaxy

Light absorption

ZnCdO

chemical-vapor-deposition

growth

vectored-flow epitaxy

Band gap engineering

zn1-xcdxo thin-films

Metal organic

nanorods

layers

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