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HfO2 for strained-S...
HfO2 for strained-Si and strained-SiGe MOSFETs
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- Yousif, M. Y. A., 1963 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Johansson, Mikael (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lundgren, Per, 1968 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bengtsson, Stefan, 1961 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sundqvist, J. (författare)
- Uppsala universitet,Uppsala University
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- Harsta, Anders (författare)
- Uppsala universitet,Uppsala University
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- Radamson, H. H. (författare)
- Kungliga Tekniska Högskolan (KTH),Royal Institute of Technology (KTH)
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(creator_code:org_t)
- ISBN 0780379993
- 2003
- 2003
- Engelska.
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Ingår i: ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03. - 1930-8876. - 0780379993 ; , s. 255-
- Relaterad länk:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- We report on HfO2 gate dielectrics grown by atomic layer deposition (ALD) at 600°C on strained-Si and strained-SiGe layers. The strain status in the Si layer remained unaltered after HfO2 deposition and an interface state density of ~1×1011 cm-2 eV-1 was obtained for the case of thick HfO2 films. The breakdown fields were in the range 2-5 MV/cm, which is high compared to HfO2 films grown at higher temperatures. The leakage current was reduced by more than five orders of magnitude for the case of a thin HfO2 film with an EOT of 1.25 nm and ultra-thin cap (2.5-3 nm) layers on Si0.77Ge0.23/Si. The carrier transport through these HfO2 films was found to follow Frenkel-Poole emission over a wide range of applied gate voltage
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- dielectric thin films
- interface states
- semiconductor materials
- atomic layer deposition
- elemental semiconductors
- leakage currents
- MOSFET
- Ge-Si alloys
- hafnium compounds
- semiconductor device breakdown
- silicon
- Poole-Frenkel effect
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
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