Anisotropic transport properties in InAs/AlSb heterostructures

• We have investigated the anisotropic transport behavior of InAs/AlSb heterostructures grown on a(001) InP substrate. An electrical analysis showed anisotropic sheet resistance Rsh and electronmobility μn in the two dimensional electron gas (2DEG). Hall measurements demonstrated anenhanced anisotropy in μn when cooled from room temperature to 2 K. High electron mobilitytransistors exhibited 27% higher maximum drain current IDS and 23% higher peak transconductancegm when oriented along the [1-10] direction. The anisotropic transport behavior in the 2DEG wascorrelated with an asymmetric dislocation pattern observed in the surface morphology and bycross-sectional microscopy analysis of the InAs/AlSb heterostructure.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Hall effect

surface morphology

electric resistance

III-V semiconductors

dislocations

semiconductor growth

electron mobility

indium compounds

high electron mobility transistors

aluminium compounds

cooling

two-dimensional electron gas

semiconductor heterojunctions

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