Manipulation of strain relaxation in metamorphic heterostructures

• The authors have discovered that high doping densities in an alloy graded InGaAs buffer havedramatic effects on strain relaxation dynamics and consequently surface and optical qualities inmetamorphic heterostructures. Compared with undoped graded buffers, the use of Be dopingsignificantly improves structural, surface, and optical qualities while the use of Si dopingdeteriorates all these properties. This discovery is significant for the realization of metamorphicoptoelectronic devices.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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