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20 μm gate width CV...
20 μm gate width CVD graphene FETs for 0.6 THz detection
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- Zak, Audrey, 1990 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- ANDERSSON, MICHAEL, 1988 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bauer, Maris (author)
- Johann Wolfgang Goethe Universität Frankfurt am Main,Goethe University Frankfurt
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- Lisauskas, Alvydas (author)
- Johann Wolfgang Goethe Universität Frankfurt am Main,Goethe University Frankfurt
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- Roskos, Hartmut (author)
- Johann Wolfgang Goethe Universität Frankfurt am Main,Goethe University Frankfurt
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- Stake, Jan, 1971 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2014
- 2014
- English.
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In: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - 2162-2027 .- 2162-2035. ; , s. Art. no. 6956250-
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Abstract
Subject headings
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- We have fabricated 20 μm gate width graphene field effect transistors (GFETs) based on graphene grown by chemical vapor deposition (CVD). These GFETs are integrated with split bow-tie antennae for room temperature, direct detection of a 0.6 THz signal. Our detectors reach a maximum optical responsivity of 3.0 V/W and a minimum noise-equivalent power (NEP) of 700 pW/Hz^0.5. The successful demonstration of THz detection using CVD graphene introduces the possibility for scalable detector production.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- antenna-integrated detectors
- CVD graphene
- Graphene field effect transistors
- direct terahertz detection
Publication and Content Type
- kon (subject category)
- ref (subject category)
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