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Sökning: id:"swepub:oai:research.chalmers.se:c1a71d86-87c4-4adf-af6c-751e34806fb5" > Room-Temperature No...

Room-Temperature Non-Local Spin Transport in Few-Layer Black Phosphorus Passivated with MgO

Li, Chexin (författare)
University of Science and Technology Beijing
Xu, Xiaoguang (författare)
University of Science and Technology Beijing
Ma, Yingli (författare)
University of Science and Technology Beijing
visa fler...
Zhao, Bing, 1990 (författare)
Chalmers tekniska högskola,Chalmers University of Technology
Zhang, Tanzhao (författare)
University of Science and Technology Beijing
Wang, Le (författare)
Renmin University of China
Wu, Yong (författare)
University of Science and Technology Beijing
Meng, Kangkang (författare)
University of Science and Technology Beijing
Chen, Jikun (författare)
University of Science and Technology Beijing
Jiang, Yong (författare)
University of Science and Technology Beijing
visa färre...
 (creator_code:org_t)
2022-02-19
2022
Engelska.
Ingår i: Advanced Electronic Materials. - : Wiley. - 2199-160X .- 2199-160X. ; 8:7
  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
Stäng  
  • Black phosphorus (BP), a new member of 2D materials, is an ideal selection to construct spin-based devices due to its tunable direct bandgap and high carrier mobility. Assembling van der Waals heterostructures is the most popular method to create spintronic devices for 2D materials, especially for the easily oxidized BP. However, it is too complicated to be realized for fabricating large-scale integrated circuits in practical applications. To overcome this flaw, an oxide layer on BP simultaneously serving as the protection layer and barrier to fabricate a Co/MgO/BP-based non-local spin valve is employed. The non-local spin signals demonstrate the diffusion of pure spin current in the BP channel, which is the direct evidence of the spin injection from Co into BP. Combining the Hanle precession measurements with the Bloch equation fitting, the spin transport parameters of the few-layer BP can be extracted. The spin diffusion length λs and spin relaxation time τs are 6.15 µm and 241.7 ps, respectively. Therefore, the MgO layer in the non-local spin valve can simplify the fabrication of 2D material-based spintronic devices and accelerate their applications.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Textil-, gummi- och polymermaterial (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Textile, Rubber and Polymeric Materials (hsv//eng)
NATURVETENSKAP  -- Fysik -- Annan fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Other Physics Topics (hsv//eng)
NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

spintronics
black phosphorus
non-local spin valve
Hanle precession
2D materials

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art (ämneskategori)
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