The Role of Mobile Charge in Oxygen Plasma-Enhanced Silicon-to-Silicon Wafer Bonding

• Mechanical bonding energies of oxygen plasma treated and room-temperature wafer bonded silicon surfaces have been measured as a function of storage time in parallel with measurements of electrical interface properties. The surface energy increases with time dependence similar to that of decreasing interface state concentration. The current vs voltage behavior reveals the existence of mobile ions. We suggest that these mobile charges, after the reaction with the interface states, give rise to the increased surface energy responsible for bonding.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

silicon

surface treatment

elemental semiconductors

wafer bonding

surface energy

plasma materials processing

interface states

Publikations- och innehållstyp

art (ämneskategori)

ref (ämneskategori)