A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

• This letter presents the design, fabrication and characterization of the first graphene based monolithic microwave integrated circuit (MMIC) in microstrip technology operating in W-band. The circuit is a resistive mixer in a 250 nm graphene field effect transistor (G-FET) technology on a SiC substrate. A conversion loss of 18 dB is achieved which is limited by the available local oscillator (LO) power. The mixer exhibits a flat response over radio frequency (RF) range of 90-100 GHz. The RF bandwidth is also limited by the measurement setup.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Nyckelord

W-band

resistive mixer

Engineering

Epitaxial graphene

graphene FET

MMIC

Publikations- och innehållstyp

art (ämneskategori)

ref (ämneskategori)