Wafer bonding strength increased by mobile ions

• Mechanical bonding energies of oxygen plasma treated androom temperature wafer bonded silicon surfaces have beenmeasured as a function of storage time in parallel withmeasurements of electrical interface properties. We find that the surface energy increases with a time dependence similar to that of decreasing interface state concentration. The current versus voltage behaviour reveals the existence of mobile ions. We conclude that these mobile charges after reaction with the interface states give rise to the increased surface energy responsible for the bonding.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)