Electron eigenstates in quantum dots revealed by temperature derivative capacitance spectroscopy

• A novel method is presented for detecting confined energy states in quantum dots embedded in a junction space charge region, where the reverse bias is used to discharge the initially occupied energy levels. By determining the temperature derivative of junction capacitance as a function of bias voltage and temperature, spectra are obtained with peaks revealing the existence of electron states in InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy. The method is compared with admittance based techniques and theory used earlier for interpretation of experimental data.

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TEKNIK OCH TEKNOLOGIER  -- Annan teknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Other Engineering and Technologies (hsv//eng)

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