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Sökning: swepub > Johansson Börje > Refereegranskat > Punkkinen M. P. J.

  • Resultat 1-10 av 26
  • [1]23Nästa
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1.
  • Laukkanen, P., et al. (författare)
  • Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate
  • 2010
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121. ; 81:3
  • Tidskriftsartikel (refereegranskat)abstract
    • By means of scanning tunneling microscopy/spectroscopy (STM/STS), photoelectron spectroscopy, and first-principles calculations, we have studied the bismuth (Bi) adsorbate-stabilized InSb(100) substrate surface which shows a c(2X6) low-energy electron diffraction pattern [thus labeled Bi/InSb(100)c(2X6) surface] and which includes areas with metallic STS curves as well as areas with semiconducting STS curves. The first-principles phase diagram of the Bi/InSb(100) surface demonstrates the presence of the Bi-stabilized metallic c(2X6) reconstruction and semiconducting (4X3) reconstruction depending on the chemical potentials, in good agreement with STS results. The existence of the metallic c(2X6) phase, which does not obey the electron counting model, is attributed to the partial prohibition of the relaxation in the direction perpendicular to dimer rows in the competing reconstructions and the peculiar stability of the Bi-stabilized dimer rows. Based on (i) first-principles phase diagram, (ii) STS results, and (iii) comparison of the measured and calculated STM and photoemission data, we show that the measured Bi/InSb(100)c(2X6) surface includes metallic areas with the stable c(2X6) atomic structure and semiconducting areas with the stable (4X3) atomic structure.
2.
  • Lång, J. J. K., et al. (författare)
  • Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
  • 2011
  • Ingår i: Surface Science. - 0039-6028. ; 605:9-10, s. 883-888
  • Tidskriftsartikel (refereegranskat)abstract
    • Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.
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3.
  • Punkkinen, M. P. J., et al. (författare)
  • Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces : Combined first-principles, photoemission, and scanning tunneling microscopy study
  • 2008
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121. ; 78:19
  • Tidskriftsartikel (refereegranskat)abstract
    • Bismuth adsorbate-stabilized (2x1) and (2x4) reconstructions of the GaAs(100) surfaces have been studied by first-principles calculations, valence-band and core-level photoelectron spectroscopies, and scanning tunneling microscopy. It is demonstrated that large Bi atom size leads to the formation of the pseudogap at the Fermi energy and to the lower energy of an adsorbate-derived surface band, which contributes to the stabilization of the exceptional Bi/GaAs(100)(2x1) reconstruction. It is proposed that the Bi/GaAs(100)(2x4) reconstructions include asymmetric mixed Bi-As dimers, in addition to the Bi-Bi dimers. Based on the calculations, we solve the atomic origins of the surface core-level shifts (SCLSs) of the Bi 5d photoemission spectra from the Bi/GaAs(100)(2x4) surfaces. This allows for resolving the puzzle related to the identification of two SCLS components often found in the measurements of the Bi 5d and Sb 4d core-level emissions of the Bi/III-V and Sb/III-V(100)(2x4) surfaces. Finally, the reason for the absence of the common (2x4)-beta 2 structure and additional support for the stability of the (2x1) structure on the Bi/III-V(100) surfaces are discussed in terms of Bi atom size and subsurface stress.
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4.
  • Pitkänen, H., et al. (författare)
  • Ab initio study of the phase stability in paramagnetic duplex steel alloys
  • 2009
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - APS. - 1098-0121. ; 79:2
  • Tidskriftsartikel (refereegranskat)abstract
    • Duplex stainless steels have many superior properties compared to conventional steels, this being mainly due to their microstructure containing approximately equal amount of ferrite and austenite phases formed by iron, chromium (or Cr equivalent), and nickel (or Ni equivalent). Using computational methods based on first-principles theories, the phase stability of paramagnetic Fe1-c-nCrcNin alloys (0.12 <= c <= 0.32 and 0.04 <= n <= 0.32) at high temperatures (greater than or similar to 1000 K) is addressed. It is shown that the stabilization of the ferrite-austenite two-phase field in duplex steels is a result of complex interplay of several competing phenomena. Taking into account only the formation energies yields a complete phase separation, strongly overestimating the two-phase region. The formation energies are calculated to be lower for the austenite than for the ferrite, meaning that the configurational entropy has a more significant impact on the stability field of the austenitic phase. The magnetic and vibrational free energies have opposite effects on the phase stability. Namely, the magnetic entropy favors the ferrite phase, whereas the vibrational free energy stabilizes the austenite phase. Combining the formation energies with the magnetic, vibrational, and configurational free energies, a region of coexistence between the two phases is obtained, in line with former thermodynamic assessments as well as with experimental observations.
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5.
  • Kuzmin, M., et al. (författare)
  • Atomic structure of Yb/Si(100)(2X6) : Interrelation between the silicon dimer arrangement and Si 2p photoemission line shape
  • 2010
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121. ; 82:11, s. 113302
  • Tidskriftsartikel (refereegranskat)abstract
    • Combining photoelectron spectroscopy and density-functional theory calculations, we have studied the atomic geometry of Yb/Si(100)(2 X 6) reconstruction and the mechanisms responsible for its stabilization as well as the influence of this reconstruction on Si 2p core-level photoemission. The analysis of measured and calculated surface core-level shifts supports the recently proposed model of the Yb/Si(100)(2 X 6). It involves, in agreement with valence-band measurements, unbuckled (symmetrical) silicon dimers, leading to unusually narrowed Si 2p line shape as compared to those of related systems. The origin of the symmetrical dimers in the (2 X 6) structure is discussed in the context of previous results in literature.
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6.
  • Laukkanen, P., et al. (författare)
  • Formation and destabilization of Ga interstitials in GaAsN : Experiment and theory
  • 2012
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121. ; 86:19, s. 195205
  • Tidskriftsartikel (refereegranskat)abstract
    • Using first-principles total energy calculations we have found complex defects induced by N incorporation in GaAsN. The formation energy of the Ga interstitial atom is very significantly decreased due to local effects within the defect complex. The stability of the Ga interstitials is further increased at surfaces. The present results suggest that the energetically favorable Ga interstitial atoms are much more abundant in GaAsN than the previously considered N defects, which have relatively large formation energies. Our synchrotron radiation core-level photoemission measurements support the computational results. The formation of harmful Ga interstitials should be reduced by incorporating large group IV B atoms in GaAsN.
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7.
  • Airiskallio, E., et al. (författare)
  • High temperature oxidation of Fe-Al and Fe-Cr-Al alloys : The role of Cr as a chemically active element
  • 2010
  • Ingår i: Corrosion Science. - 0010-938X. ; 52:10, s. 3394-3404
  • Tidskriftsartikel (refereegranskat)abstract
    • Good high-temperature corrosion resistance of Fe-Al alloys in oxidizing environments is due to the alpha-Al2O3 film which is formed on the surface provided temperature is above 900 degrees C and the Al-content of the alloy exceeds the critical value. Ab initio calculations combined with experiments on Fe-13Al, Fe-18Al, Fe-23Al and Fe-10Cr-10Al alloys show that the beneficial effect of Cr on the oxidation resistance is significantly related to bulk effects. The comparison of experimental and calculated results indicates a clear correlation between the Fe-Cr chemical potential difference and the formation of the protective oxide scales. (C) 2010 Elsevier Ltd. All rights reserved.
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8.
  • Airiskallio, E, et al. (författare)
  • Third element effect in the surface zone of Fe-Cr-Al alloys
  • 2010
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121. ; 81:3
  • Tidskriftsartikel (refereegranskat)abstract
    • The third element effect to improve the high temperature corrosion resistance of the low-Al Fe-Cr-Al alloys is suggested to involve a mechanism that boosts the recovering of the Al concentration to the required level in the Al-depleted zone beneath the oxide layer. We propose that the key factor in this mechanism is the coexistent Cr depletion that helps to maintain a sufficient Al content in the depleted zone. Several previous experiments related to our study support that conditions for such a mechanism to be functional prevail in real oxidation processes of Fe-Cr-Al alloys.
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9.
  • Airiskallio, E., et al. (författare)
  • Tuning the surface chemistry of Fe-Cr by V doping
  • 2009
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121. ; 80:15
  • Tidskriftsartikel (refereegranskat)abstract
    • The reversal of the magnitudes of the bulk and surface chemical-potential differences induces the outburst of Cr on the otherwise pure Fe surface of Fe-Cr alloys. This threshold value for the Cr content is about 10 at. %. It is found that vanadium addition to Fe-Cr shifts the Cr threshold to a substantially lower value suggesting V having a positive effect on the corrosion resistance of low Cr steels. The obtained shift in the Cr threshold is shown to be connected to the change in volume of the alloy.
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10.
  • Al-Zoubi, N I, et al. (författare)
  • Completeness of the exact muffin-tin orbitals : application to hydrogenated alloys
  • 2010
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121. ; 81:4
  • Tidskriftsartikel (refereegranskat)abstract
    • We investigate the basis set convergence of the exact muffin-tin orbitals by monitoring the equation of state for Al, Cu, and Rh calculated in the conventional face-centered-cubic lattice (str-I) and in a face-centered-cubic lattice with one atomic and three empty sites per primitive cell (str-II). We demonstrate that three (spd) muffin-tin orbitals are sufficient to describe Al in both structures, but for str-II Cu and Rh at least five (spdfg) orbitals are needed to get converged equilibrium Wigner-Seitz radius (within <= 0.8%) and bulk modulus (<= 3.3%). We ascribe this slow convergence to the nearly spherical densities localized around the Cu and Rh atoms, which create strongly asymmetric charge distributions within the nearest cells around the empty sites. The potential sphere radius dependence of the theoretical results for structure str-II is discussed. It is shown that a properly optimized overlapping muffin-tin potential in combination with the spdfg basis yields acceptable errors in the equilibrium bulk properties. The basis set convergence is also shown on hydrogenated Sc and Sc-based alloys.
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