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  • Resultat 1-10 av 260
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1.
  • Fu, Ying, et al. (författare)
  • Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers
  • 2006
  • Ingår i: Journal of Applied Physics. - 00218979. ; 100:7
  • Tidskriftsartikel (refereegranskat)abstract
    • The spectral gain characteristics of dilute-nitride zinc blende InxGa1-xNyAs1-y quantum wells embedded in GaNy1As1-y1 barriers have been investigated experimentally and theoretically. Two samples, both with the gain peak at 1300 nm, were studied for comparison. One has a high nitrogen concentration in the quantum well with the surrounding barriers being pure GaAs. The other has a lower and uniform nitrogen concentration in the quantum well and the barriers (GaNAs barriers). Measurements show the redshift of the gain peak induced by the incorporation of nitrogen and difference in the spectral gain characteristics. The energy band structures and spectral gain characteristics are analyzed theoretically using the standard eight-band k center dot p theory. It is shown that the introduction of nitrogen atoms in the GaAs barriers reduces the barrier height for the central quantum well so that the energy sublevels in the conduction band becomes condensed. The condensation of the conduction-band energy sublevels reduces the peak gain and makes the gain spectrum narrower, in agreement with measurements.
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3.
  • Zhao, Huan, 1982-, et al. (författare)
  • Very Low Threshold Current Density 1.292 µm GaInNAs Triple Quantum Well Lasers
  • 2008
  • Ingår i: Electronics Letters. - 0013-5194. ; 44:7, s. 475-477
  • Tidskriftsartikel (refereegranskat)abstract
    • Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers emitting at 1.29m are demonstrated. The laser structure was grown by molecular beam epitaxy after extensive optimisations of growth and in situ annealing conditions. As-cleaved broad-area lasers with a cavity length of 1mm under pulsed operation showed a record low-threshold current density of 400A/cm2 (∼130A/cm2/QW), a high differential efficiency of 0.32W/A/facet and a characteristic temperature of 94K in the temperature range 10 to 110°C. © The Institution of Engineering and Technology 2008.
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6.
  • Adolfsson, Göran, 1981-, et al. (författare)
  • Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers
  • 2009
  • Ingår i: IEEE Photonics Technology Letters. - 1041-1135. ; 21:134, s. 134-136
  • Tidskriftsartikel (refereegranskat)abstract
    • We present results from measurements of the subthreshold lateral spontaneous emission profile in 1.3-mu m wavelength ridge waveguide InGaNAs quantum-well lasers using a scanning near-field optical microscopy technique. The measurements reveal the presence of significant lateral carrier diffusion which has a profound effect on the temperature dependence of the threshold current. This effect is frequently omitted when the characteristic temperature of the threshold current is considered.
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7.
  • Adolfsson, Göran, 1981-, et al. (författare)
  • Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3 um Double Quantum-Well GaInNAs/GaAs Lasers
  • 2008
  • Ingår i: IEEE Journal of Quantum Electronics. ; 44:7, s. 607-616
  • Tidskriftsartikel (refereegranskat)abstract
    • We present an experimental and theoretical investigation of the temperature dependence of the threshold current for double quantum well GaInNAs–GaAs lasers in the temperature range 10 C–110 C. Pulsed measurements of the threshold current have been performed on broad and narrow ridge wave guide (RWG) lasers. The narrow RWG lasers exhibit high characteristic temperatures (T0)of 200 K up to a critical temperature (Tc), above which T0 is reduced by approximately a factor of 2. The T0-values for broad RWG lasers are significantly lower than those for the narrow RWG lasers, with characteristic temperatures on the order of 100 (60) K below (above). Numerical simulations, using a model that accounts for lateral diffusion effects, show good agreement with experimental data and reveal that a weakly temperature dependent lateral diffusion current dominates the threshold current for narrow RWG lasers.
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Gustavsson, Johan S. ... (145)
Westbergh, Petter, 1 ... (114)
Haglund, Åsa, 1976-, (80)
Wang, Shumin, 1963-, (74)
Sadeghi, Mahdad, 196 ... (66)
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Bengtsson, Jörgen, 1 ... (40)
Wei, Yong Qiang, 197 ... (33)
Kögel, Benjamin, 197 ... (31)
Szczerba, Krzysztof, ... (30)
Andrekson, Peter, 19 ... (27)
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Modh, Peter, 1968-, (20)
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Lim, J.J. (15)
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Zhao, Qing Xiang, 19 ... (12)
Sujecki, S. (12)
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Tångring, Ivar, 1978 ... (10)
Stattin, Martin, 198 ... (9)
Bull, S (9)
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Lai, Zonghe, 1948-, (8)
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Lengyel, Tamás, 1986 ... (8)
Joel, Andrew (8)
Agrell, Erik, 1965-, (7)
Jedrasik, Piotr, 195 ... (7)
Chao, S. (7)
Song, Yuxin, 1981-, (7)
Lu, W (6)
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Hyldgaard, Per, 1964 ... (5)
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White, I.H. (5)
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