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  • Wang, Shumin, 1963-, et al. (författare)
  • Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
  • 2011
  • Ingår i: Physica Status Solidi B - Basic Solid State Physics. - 0370-1972. ; 248:5, s. 1207-1211
  • Tidskriftsartikel (refereegranskat)abstract
    • In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.
  • Westbergh, Petter, 1981-, et al. (författare)
  • Single mode 1.3 μm InGaAs VCSELs for access network applications
  • 2008
  • Ingår i: Proceedings of the SPIE - The International Society for Optical Engineering. - 0277-786X. ; 6997, s. 69970
  • Konferensbidrag (refereegranskat)abstract
    • GaAs-based VCSELs emitting near 1.3 μm are realized using highly strained InGaAs quantum wells and a large detuning of the cavity resonance with respect to the gain peak. The VCSELs have an oxide aperture for current and optical confinement and an inverted surface relief for suppression of higher-order transverse modes. The inverted surface relief structure also has the advantage of suppressing oxide modes that otherwise appear in VCSELs with a large detuning between the cavity resonance and the gain peak. Under large signal, digital modulation, clear and open eyes and error free transmission over 9 km of single mode fiber have been demonstrated at the OC-48 and 10 GbE bit rates up to 85°C. Here we review these results and present results from a complementary study of the RF modulation characteristics, including second order harmonic and third order intermodulation distortion, relative intensity noise (RIN), and spurious free dynamic range (SFDR). RIN levels comparable to those of single mode VCSELs emitting at 850 nm are demonstrated, with values from -140 to -150 dB/Hz. SFDR values of 100 and 95 dBHz2/3 were obtained at 2 and 5 GHz, respectively, which is in the range of those required in radio-over-fiber systems.
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