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1.
  • Fu, Ying, et al. (författare)
  • Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers
  • 2006
  • Ingår i: Journal of Applied Physics. - 00218979. ; 100:7
  • Tidskriftsartikel (refereegranskat)abstract
    • The spectral gain characteristics of dilute-nitride zinc blende InxGa1-xNyAs1-y quantum wells embedded in GaNy1As1-y1 barriers have been investigated experimentally and theoretically. Two samples, both with the gain peak at 1300 nm, were studied for comparison. One has a high nitrogen concentration in the quantum well with the surrounding barriers being pure GaAs. The other has a lower and uniform nitrogen concentration in the quantum well and the barriers (GaNAs barriers). Measurements show the redshift of the gain peak induced by the incorporation of nitrogen and difference in the spectral gain characteristics. The energy band structures and spectral gain characteristics are analyzed theoretically using the standard eight-band k center dot p theory. It is shown that the introduction of nitrogen atoms in the GaAs barriers reduces the barrier height for the central quantum well so that the energy sublevels in the conduction band becomes condensed. The condensation of the conduction-band energy sublevels reduces the peak gain and makes the gain spectrum narrower, in agreement with measurements.
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2.
  • Han, T.T., et al. (författare)
  • Structural analysis of dilute-nitride zinc blende InxGa1−xNyAs1−y cluster by a semiempirical quantum chemistry study
  • 2007
  • Ingår i: Journal of Applied Physics. - 0021-8979. ; 101:12, s. 123707-1-123707-6
  • Tidskriftsartikel (refereegranskat)abstract
    • We have studied the total energy of a series of dilute-nitride zinc blende Inx Ga1-x Ny As1-y cluster configurations using a semiempirical quantum chemistry method. It was found that In-N bonding is favorable from an energy point of view when the N atom is substitutional (replacing an As atom at the regular zinc blende lattice site) and the In mole fraction is smaller than 25%. In-N bonding is always favorable when the N atom is interstitial. Furthermore, an analysis of the incorporation of N-N pairs showed that substitutional incorporation is favored over interstitial. In addition, the dissociation of a N-N pair was found to depend on the local environment, being either In rich or In-free, along the dissociation trajectory when the average In mole fraction is high. The theoretical results are in agreement with experimental results.
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3.
  • Kakanakova-Georgieva, Anelia, et al. (författare)
  • Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
  • 2010
  • Ingår i: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. - John Wiley and Sons, Ltd. - 1862-6254. ; 4:11, s. 311-313
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the hot-wall MOCVD growth of Mg-doped AlxGa1-xN layers with an Al content as high as x similar to 0.85. After subjecting the layers to post-growth in-situ annealing in nitrogen in the growth reactor, a room temperature resistivity of 7 k Omega cm was obtained indicating an enhanced p-type conductivity compared to published data for AlxGa1-xN layers with a lower Al content of x similar to 0.70 and a room temperature resistivity of about 10 k Omega cm. It is believed that the enhanced p-type conductivity is a result of reduced compensation by native defects through growth conditions enabled by the distinct hot-wall MOCVD system.
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4.
  • Lindberg, Hans, 1977-, et al. (författare)
  • Improved spectral properties of an optically pumped semiconductor disk laser using a thin diamond heat spreader as an intracavity filter
  • 2005
  • Ingår i: IEEE Photonics Technology Letters. - 1041-1135. ; 17:7, s. 1363-1365
  • Tidskriftsartikel (refereegranskat)abstract
    • This letter describes an optically pumped high-power InP-based semiconductor disk laser with a thin (50 mu m) diamond heat spreader bonded to the surface of the gain chip. The diamond heat spreader performs the multiple functions of heat removal, spectral filtering, and wavelength stabilization by utilizing the high thermal conductivity and the low thermooptic coefficient of diamond, along with the large free-spectral range of a thin intracavity etalon. A pump-power-limited output power of 680 mW at 1.55 mu m is demonstrated at a heat sink temperature of -30 degrees C, and 140 mW at room temperature. The spectral width was measured to be less than 0.08 nm and the spectral drift with temperature and pump power as low as 0.03 nm/degrees C and 0.14 nm/W, respectively.
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5.
  • Söderberg, Emma, 1980-, et al. (författare)
  • Suppression of higher order transverse modes and oxide modes in 1.3 µm InGaAs VCSELs by an inverted surface relief
  • 2007
  • Ingår i: IEEE Photonics Technology Letters. ; 19
  • Tidskriftsartikel (refereegranskat)abstract
    • It is shown, by a systematic variation of design parameters, that the use of an inverted surface relief is very effective for suppressing higher order transverse modes in oxide confined 1.3-mu m InGaAs vertical-cavity surface-emitting lasers (VCSELs). Single-mode emission is achieved for a large variety of oxide aperture and surface relief diameters, with optimum designs, having a surface relief with a diameter half of that of the oxide aperture, producing 1.1-1.3 mW of single-mode power. It is also shown that the anti-phase layer employed to enable the use of an inverted surface relief is effective for suppressing oxide modes that otherwise appear in oxide confined VCSELs with a large detuning between the gain peak and the cavity resonance.
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6.
  • Zhao, Huan, 1982-, et al. (författare)
  • Comparison of Optical and Structural Quality of GaIn(N)As Analog and Digital Quantum Wells Grown by Molecular Beam Epitaxy
  • 2008
  • Ingår i: Semiconductor Science of Technology. ; 23
  • Tidskriftsartikel (refereegranskat)abstract
    • A set of Ga0.625In0.375(N) As single quantum well (QW) samples with the identical total amounts of Ga and In and QW thicknesses was designed and grown by both the analog and the digital methods using molecular beam epitaxy. The N exposure time in the GaInNAs samples was kept the same. The inter-band gap recombination in the analog and the digital InGaAs QWs appears in a similar transition energy range as a result of In segregation. Temperature-dependent photoluminescence (PL) measurements were performed on the GaInNAs samples. An S-shaped dependence of the transition energy on temperature was observed in the digital GaInNAs QWs but not in the analog GaInNAs QW. Post-growth rapid thermal annealing had remarkably different effects on the PL intensity: an increase for the analog InGaAs QW and for the analog and digital GaInNAs QWs, but a decrease for the digital InGaAs QW with increasing annealing temperature. The GaIn(N) As samples grown by the digital method showed weaker PL intensities and smaller wavelength blue-shifts than the similar samples grown by the analog method. Possible strain relaxation mechanisms are discussed.
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7.
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8.
  • Adolfsson, Göran, 1981-, et al. (författare)
  • Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers
  • 2009
  • Ingår i: IEEE Photonics Technology Letters. - 1041-1135. ; 21:134, s. 134-136
  • Tidskriftsartikel (refereegranskat)abstract
    • We present results from measurements of the subthreshold lateral spontaneous emission profile in 1.3-mu m wavelength ridge waveguide InGaNAs quantum-well lasers using a scanning near-field optical microscopy technique. The measurements reveal the presence of significant lateral carrier diffusion which has a profound effect on the temperature dependence of the threshold current. This effect is frequently omitted when the characteristic temperature of the threshold current is considered.
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9.
  • Adolfsson, Göran, 1981-, et al. (författare)
  • Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3 um Double Quantum-Well GaInNAs/GaAs Lasers
  • 2008
  • Ingår i: IEEE Journal of Quantum Electronics. ; 44:7, s. 607-616
  • Tidskriftsartikel (refereegranskat)abstract
    • We present an experimental and theoretical investigation of the temperature dependence of the threshold current for double quantum well GaInNAs–GaAs lasers in the temperature range 10 C–110 C. Pulsed measurements of the threshold current have been performed on broad and narrow ridge wave guide (RWG) lasers. The narrow RWG lasers exhibit high characteristic temperatures (T0)of 200 K up to a critical temperature (Tc), above which T0 is reduced by approximately a factor of 2. The T0-values for broad RWG lasers are significantly lower than those for the narrow RWG lasers, with characteristic temperatures on the order of 100 (60) K below (above). Numerical simulations, using a model that accounts for lateral diffusion effects, show good agreement with experimental data and reveal that a weakly temperature dependent lateral diffusion current dominates the threshold current for narrow RWG lasers.
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10.
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