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Sökning: swepub > Larsson Anders > Modh Peter 1968 > Söderberg Emma 1980 > Engelska

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1.
  • Söderberg, Emma, 1980-, et al. (författare)
  • Suppression of higher order transverse modes and oxide modes in 1.3 µm InGaAs VCSELs by an inverted surface relief
  • 2007
  • Ingår i: IEEE Photonics Technology Letters. ; 19
  • Tidskriftsartikel (refereegranskat)abstract
    • It is shown, by a systematic variation of design parameters, that the use of an inverted surface relief is very effective for suppressing higher order transverse modes in oxide confined 1.3-mu m InGaAs vertical-cavity surface-emitting lasers (VCSELs). Single-mode emission is achieved for a large variety of oxide aperture and surface relief diameters, with optimum designs, having a surface relief with a diameter half of that of the oxide aperture, producing 1.1-1.3 mW of single-mode power. It is also shown that the anti-phase layer employed to enable the use of an inverted surface relief is effective for suppressing oxide modes that otherwise appear in oxide confined VCSELs with a large detuning between the gain peak and the cavity resonance.
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2.
  • Gustavsson, Johan, 1974-, et al. (författare)
  • Mode and polarization control in VCSELs using shallow surface structures
  • 2007
  • Ingår i: IET Optoelectronics. ; 1:5, s. 197-205
  • Tidskriftsartikel (refereegranskat)abstract
    • Monolithic techniques for mode and polarisation control in vertical-cavity surface emitting lasers (VCSELs) using shallow surface structures are summarized and put in the context with other techniques in terms of performance and manufacturability. The method of using circular-symmetric surface structures for mode control and their combination with a sub-wavelength surface grating for simultaneous mode and polarisation control is described in detail, and adherent experimental results for both 850-nm and 1.3-µm oxide-confined VCSELs are presented.
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  • Westbergh, Petter, 1981-, et al. (författare)
  • Single mode 1.3 μm InGaAs VCSELs for access network applications
  • 2008
  • Ingår i: Proceedings of the SPIE - The International Society for Optical Engineering. - 0277-786X. ; 6997, s. 69970
  • Konferensbidrag (refereegranskat)abstract
    • GaAs-based VCSELs emitting near 1.3 μm are realized using highly strained InGaAs quantum wells and a large detuning of the cavity resonance with respect to the gain peak. The VCSELs have an oxide aperture for current and optical confinement and an inverted surface relief for suppression of higher-order transverse modes. The inverted surface relief structure also has the advantage of suppressing oxide modes that otherwise appear in VCSELs with a large detuning between the cavity resonance and the gain peak. Under large signal, digital modulation, clear and open eyes and error free transmission over 9 km of single mode fiber have been demonstrated at the OC-48 and 10 GbE bit rates up to 85°C. Here we review these results and present results from a complementary study of the RF modulation characteristics, including second order harmonic and third order intermodulation distortion, relative intensity noise (RIN), and spurious free dynamic range (SFDR). RIN levels comparable to those of single mode VCSELs emitting at 850 nm are demonstrated, with values from -140 to -150 dB/Hz. SFDR values of 100 and 95 dBHz2/3 were obtained at 2 and 5 GHz, respectively, which is in the range of those required in radio-over-fiber systems.
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