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1.
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2.
  • Asghar, M., et al. (författare)
  • Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
  • 2012
  • Konferensbidrag (refereegranskat)abstract
    • In this study deep level transient spectroscopy has been performed on boron-nitrogen co-doped 6H-SiC epilayers exhibiting p-type conductivity with free carrier concentration (N-A-N-D)similar to 3 x 10(17) cm(-3). We observed a hole H-1 majority carrier and an electron E-1 minority carrier traps in the device having activation energies E-nu + 0.24 eV, E-c -0.41 eV, respectively. The capture cross-section and trap concentration of H-1 and E-1 levels were found to be (5 x 10(-19) cm(2), 2 x 10(15) cm(-3)) and (1.6 x 10(-16) cm(2), 3 x 10(15) cm(-3)), respectively. Owing to the background involvement of aluminum in growth reactor and comparison of the obtained data with the literature, the H-1 defect was identified as aluminum acceptor. A reasonable justification has been given to correlate the E-1 defect to a nitrogen donor.
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3.
  • Asghar, M., et al. (författare)
  • Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
  • 2012
  • Konferensbidrag (refereegranskat)abstract
    • Deep level transient spectroscopy (DLTS) is employed to study deep level defects in n-6H-SiC (silicon carbide) epilayers grown by the sublimation method. To study the deep level defects in n-6H-SiC, we used as-grown, nitrogen doped and nitrogen-boron co-doped samples represented as ELS-1, ELS-11 and ELS-131 having net (N-D-N-A) similar to 2.0 x 10(12) cm(-3), 2 x 10(16) cm(-3) and 9 x 10(15) cm(3), respectively. The DLTS measurements performed on ELS-1 and ELS-11 samples revealed three electron trap defects (A, B and C) having activation energies E-c - 0.39 eV, E-c - 0.67 eV and E-c - 0.91 eV, respectively. While DLTS spectra due to sample ELS-131 displayed only A level. This observation indicates that levels B and C in ELS-131 are compensated by boron and/or nitrogen-boron complex. A comparison with the published data revealed A, B and C to be E-1/E-2, Z(1)/Z(2) and R levels, respectively.
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4.
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5.
  • Beshkova, Milena, et al. (författare)
  • Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
  • 2010
  • Ingår i: Materials Science Forum, Vols. 645-648. - Transtec Publications; 1999. ; s. 183-186
  • Konferensbidrag (refereegranskat)abstract
    • 3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000 degrees C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied by reciprocal space map (RSM) which shows that double positions domains exists.
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6.
  • Beshkova, Milena, 1975-, et al. (författare)
  • Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
  • 2009
  • Ingår i: ECSCRM2009,2009. - Materials Science Forum Vols. 615-617 : Trans Tech Publications. - 978-087849334-0 ; s. 181-184
  • Konferensbidrag (refereegranskat)abstract
    • The present paper deals with morphological and structural investigation of 3C-SiC layers grown by sublimation epitaxy on on axis 6H-SiC(0001) at source temperature 2000 °C, under vacuum conditions (<10-5 mbar) and different temperature gradients in the range of 5-8 °C/mm. The layer grown at a temperature gradient 6 °C/mm has the largest average domain size of 0.4 mm2 assessed by optical microscope in transmission mode. The rocking curve full width at half maximum (FWHM) of (111) reflection is 43 arcsec which suggests good crystalline quality. The AFM image of the same layer shows steps with height 0.25 nm and 0.75 nm which are characteristic of a stacking fault free 3C-SiC surface and c-axis repeat height, respectively.
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7.
  • Beshkova, Milena, et al. (författare)
  • Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions
  • 2012
  • Ingår i: Vacuum. - Elsevier. - 0042-207X. ; 86:10, s. 1595-1599
  • Tidskriftsartikel (refereegranskat)abstract
    • 3C-SiC layers have been grown by using sublimation epitaxy at a source temperature of 2000 degrees C, under vacuum conditions (andlt;10(-5) mbar) on well oriented (on-axis) 6H-SiC (0001) substrates. Close space sublimation growth geometry has been used in a RF-heated furnace employing high-purity graphite crucible with a possibility to change the growth environment from Si vapor-rich to C vapor-rich. The optical microscopy in transmission mode reveals continuous 3C-domains for 3C-SiC with less than 0.4% 6H-inclusions for the layer grown at Si-rich conditions, and separate 3C-SiC domains for the layer grown at C-rich conditions. The type of 6H-inclusions for layers with continuous domain structure investigated by Atomic Force Microscopy (AFM) is discussed. 2Theta-omega scan shows 0006 and 111 peaks coming from the substrate and the layer, respectively with a higher intensity of the 111 peak for 3C-SiC grown at Si-rich conditions which is related with the continuous character of the 3C-SiC domains.
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8.
  • Bikbajevas, V, et al. (författare)
  • Impact of phonon drag effect on Seebeck coefficient in p-6H-SiC : Experiment and simulation
  • 2003
  • Ingår i: Materials Science Forum, Vols. 433-436. ; s. 407-410
  • Konferensbidrag (refereegranskat)abstract
    • The temperature dependence of Seebeck coefficient (S) for p-6H-SiC has been obtained. It increases from 2 up to 5.2 mV/K when temperature decreases from 400 down to 240 K. It is shown that phonon drag effect makes critical contribution to the S value. Improved theoretical model involving 4-phonon scattering process has been proposed for the simulation of Seebeck coefficient phonon pail.
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9.
  • Ciechonski, Rafal, et al. (författare)
  • Effect of Ambient on 4H-SiC Bulk Crystals grown by Sublimation
  • 2003
  • Ingår i: Materials Science Forum, Vols. 433-436. ; s. 75-78
  • Konferensbidrag (refereegranskat)abstract
    • Sublimation bulk growth in vacuum using graphite crucibles and such with tantalum shielding of the crucible walls has been studied. Residual nitrogen, aluminum and boron doping in the material grown in vacuum is presented. Activation energies of growth rate in respect to growth temperature in vacuum are deduced. The estimated values are 21 kcallmole for growth temperatures below 2075°C and 128 kcal/mole in the range of growth temperatures between 2075°C and 2275°C. Cathodoluminescence spectra taken from samples grown in the graphite crucible in absence of tantalum under different pressures show nitrogen-alurninum DAP transition and strong luminescence from deep boron. This is not the case for samples grown in the tantalum environment.
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10.
  • Ciechonski, Rafal, et al. (författare)
  • Effect of boron on the resistivity of compensated 4H-SiC
  • 2003
  • Ingår i: Journal of electronic materials. - 0361-5235 (print) 1543-186X (online). ; 32:5, s. 452-457
  • Tidskriftsartikel (refereegranskat)abstract
    • High-resistivity 4H-SiC samples grown by sublimation with a high growth rate are studied. The measurements show resistivity values up to a high of 104 Ωcm. The secondary ion mass spectroscopy (SIMS) results revealed a presence of only common trace impurities such as nitrogen, aluminum, and boron. To understand the compensation mechanism in these samples, capacitance deep-level transient spectroscopy (DLTS) on the p-type epilayers has been performed. By correlation between the growth conditions and SIMS results, we apply a model in which it is proposed that an isolated carbon vacancy donorlike level is a possible candidate responsible for compensation of the shallow acceptors in p-type 4H-SiC. A relation between cathodoluminescence (CL) and DLTS data is taken into account to support the model.
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