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| 2. |
- Jacobson, H, et al.
(författare)
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Lateral enlargement of silicon carbide crystals
- 2002
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Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 39-42
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Konferensbidrag (refereegranskat)abstract
- A new growth technique for lateral enlargement of silicon carbide crystals is presented. The technique is based on sublimation growth but modified with respect to temperature gradients and geometry as compared to conventional setup. Simulation of the temperature distribution for lateral growth as well as the growth mechanism is discussed. Synchrotron white beam x-ray topographs have been evaluated concerning threading defects along the 0001 direction. Finally, a comparison between laterally grown 4H, 6H-silicon carbide and a commercial 4H-silicon carbide wafer is demonstrated, and shows that this growth technique makes it possible to enlarge seed crystals without screw dislocations and micropipes along the 0001 direction.
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| 3. |
- Jacobson, H., et al.
(författare)
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Lateral enlargement of silicon carbide crystals
- 2004
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 270:1-2
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Tidskriftsartikel (refereegranskat)abstract
- A new growth technique for lateral enlargement of silicon carbide crystals is presented and evaluated. The technique is based on PVT growth but modified with respect to temperature gradients and geometry as compared to conventional setup. Simulation of the temperature distribution for lateral growth as well as the growth mechanism is discussed. High-resolution X-ray diffraction and synchrotron white beam X-ray topography have been evaluated concerning structural defects. The results show that this growth technique makes it possible to enlarge seed crystals without threading screw dislocations and micropipes along the 0001 direction, but stacking faults are introduced due to the crystal stacking sequence along the <11¯00> directions. © 2004 Elsevier B.V.
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| 4. |
- Jacobson, H., et al.
(författare)
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Structural impact of LPE buffer layer on sublimation grown 4H-SiC epilayers
- 2003
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Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 256:3-4, s. 276-282
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Tidskriftsartikel (refereegranskat)abstract
- The objective of this work was to study the effect of a liquid phase epitaxy buffer layer on the development of defects in sublimation grown epitaxial layers of 4H-SiC. The results were analyzed with the aid of optical microscope, scanning electron microscope, high-resolution X-ray diffraction and synchrotron white beam X-ray topography. A pronounced effect of the liquid phase epitaxy buffer layer on formation of dislocations and micropipes is observed in the sublimation epitaxy layers. It has been shown that during sublimation growth of epilayer with a thin liquid phase epitaxy buffer layer (0.1µm) defects may undergo transformation and stacking faults can be formed. Sublimation grown epilayers grown on a thick liquid phase epitaxy buffer layer (1µm) also showed a symmetrical distribution of misfit dislocations along the <112¯0> and [11¯00] directions. © 2003 Elsevier B.V. All rights reserved.
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| 5. |
- Vouroutzis, N, et al.
(författare)
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Behavior of micropipes during growth in 4H-SiC
- 2002
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Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 395-398
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Konferensbidrag (refereegranskat)abstract
- The disturbance of the growth steps in SiC epitaxy and the formation of stacking faults (SFs) in the vicinity of a micropipe were studied by Atomic Force Microscopy and Transmission Electron Microscopy. Shallow trenches are observed in front of the micropipes due to the distortion of the growth steps towards of the micropipe. The trenches are related with extended (1 (1) over bar 00) type SFs bounded by 1/6 < 11 (2) over bar1 > partial dislocations. These results are also supported by synchrotron X-ray topography.
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| 6. |
- Yakimova, Rositsa, et al.
(författare)
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Impact of the initial surface conditions on defect appearance in 4H-SiC epilayers
- 2002
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Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 283-286
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Konferensbidrag (refereegranskat)abstract
- Effect of surface irregularities on defect nucleation and development in thick epitaxial layers of 4H-SiC has been investigated. It has been shown that during growth extended defects may undergo transformation and thus stacking faults can be formed, which is favored in thicker layers (e.g. 50mum). Network of misfit dislocations appears if the initial surface has a certain critical roughness and a lower surface energy. Evidence has been presented that well ordered graphite layer might form on the substrates during the preheating stage prior to growth via sublimation.
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