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61.	Engström, Olof, 1943, et al. (author) Relation between charge carrier emission mechanisms and materials properties of InAs/GaAs quantum dots 2007 In: European materials Research Society Meeting, Strasbourg, may 2007. Conference paper (peer-reviewed)
62.	Engström, Olof, 1943 (author) Response to "Comment on a model for internal photoemission at high-k oxide silicon energy barriers, J. Appl. Phys. 112, 064115 (2012)" 2013 In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 113:16, s. 166102- Journal article (other academic/artistic)
63.	Engström, Olof, 1943, et al. (author) Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots 2003 In: International Conference on Trends in Nanotechnology, Salamanca, Spain. Conference paper (peer-reviewed)
64.	Engström, Olof, 1943, et al. (author) Statistics of Electron Emission from InAs/GaAs quantum dots 2006 In: Material Science and Engineering: C. ; 26:5-7, s. 739-744 Journal article (peer-reviewed)
65.	Engström, Olof, 1943 (author) The MOS System 2014 Book (other academic/artistic)abstract This detailed and up-to-date guide to modern MOS structures describes important tools, cutting-edge models, novel phenomena and current challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors and metals, before moving on to electrical and physical characterization methods for high-k dielectric materials. Finally, real MOS systems are introduced: high-k dielectrics and interlayers, the influence of phonon dynamics, interface states and bulk traps, effective metal work functions, gate leakage phenomena and high mobility channel materials. Abstract concepts are supported by practical examples and critical comparison, encouraging an intuitive understanding of the principles at work, and presented alongside recent theoretical and experimental results, making this the ideal companion for researchers, graduate students and industrial development engineers working in nanoelectronics.
66.	Engström, Olof, 1943, et al. (author) Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots 2003 In: Applied Physics Letters. ; 85, s. 3578- Journal article (peer-reviewed)
67.	Engström, Olof, 1943, et al. (author) Three dimensional mapping of thermal and tunnelling electron emission from InAs/GaAs quantum dots 2007 In: Applied Physics Letters. ; 91, s. 033110- Journal article (peer-reviewed)
68.	Engström, Olof, 1943, et al. (author) Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy 2008 In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 103:10, s. Art. no. 104101- Journal article (peer-reviewed)abstract Using a method based on the frequency dependence of capacitance, cross sections for electron capture into energy states at the interlayer/silicon interface have been investigated for HfO2 that is deposited on silicon by reactive sputtering. We find that the capture cross sections are thermally activated and steeply increase with increasing energy depth. Both features can be attributed to the same physical origin, indicating vibronic trap properties, where the capture mechanism is governed by multiphonon processes.
69.	Engström, Olof, 1943 (author) Will the insulated gate transistor survuve next decade? 2007 In: Future trends in microelectronics: Up the nanocreek (John Wiley & Son, 2007). ; , s. 192- Book chapter (other academic/artistic)
70.	Fu, Ying, 1964, et al. (author) Electron wave packet transmission through a Si quantum wire under the influence of an ionized impurity scattering potential 2006 In: Journal of Nanoelectronics and Optoelectronics. ; 1, s. 108- Journal article (peer-reviewed)

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Result 61-70 of 136

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Type of publication: journal article (77); conference paper (53); book chapter (3); editorial collection (1); book (1); doctoral thesis (1); show more...; show less...

Type of content: peer-reviewed (124); other academic/artistic (12)

Author/Editor: Engström, Olof, 1943 (130); Raeissi, Bahman, 197 ... (33); Bengtsson, Stefan, 1 ... (19); Hall, S. (19); Kaczmarczyk, M (19); Gottlob, H. D. B. (18); show more...; Cherkaoui, K. (15); Hurley, P. K. (14); Lemme, M. C. (10); Schmidt, M. (9); Jauhiainen, Anders, ... (8); Jung, W. (6); Lemme, Max C., 1970- (6); Kasper, E. (6); Karmous, A. (6); Surma, B (6); Buiu, O. (6); Fu, Ying, 1964- (6); Persson, Lars-Olof, ... (5); Larsson, Sven, 1943 (5); Sullivan, Marianne, ... (5); Davey, W.M. (5); Lu, Y (4); Schubert, J (4); Sanz-Velasco, Anke, ... (4); Lopes, J. M. J. (4); Lemme, Max (3); O’Connor, E. (3); Peaker, A.R. (3); Barcz, A. (3); Kurz, H. (3); Malmkvist, Mikael, 1 ... (3); Buiu, Octavian (3); Hurley, Paul (3); Cherkaoui, Karim (3); Andersson, G (2); Stake, Jan, 1971 (2); Lin, S (2); Andersson, Mats O., ... (2); Olafsson, Halldor, 1 ... (2); Sveinbjörnsson, Eina ... (2); Habibpour, Omid, 197 ... (2); Rydén, Anna, 1957 (2); Bakowski, M. (2); Ghibaudo, G. (2); Stefani, A (2); Petersson, Göran, 19 ... (2); Esteve, R (2); Osten, H. J. (2); Ducroquet, F. (2); show less...

University: Chalmers University of Technology (130); Royal Institute of Technology (7); University of Gothenburg (5); Stockholm University (1)

Language: English (135); Swedish (1)

Research subject (UKÄ/SCB): Engineering and Technology (106); Natural sciences (32); Medical and Health Sciences (5); Social Sciences (1)

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