| 1. |
- Jacobson, H, et al.
(författare)
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Lateral enlargement of silicon carbide crystals
- 2002
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Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 39-42
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Konferensbidrag (refereegranskat)abstract
- A new growth technique for lateral enlargement of silicon carbide crystals is presented. The technique is based on sublimation growth but modified with respect to temperature gradients and geometry as compared to conventional setup. Simulation of the temperature distribution for lateral growth as well as the growth mechanism is discussed. Synchrotron white beam x-ray topographs have been evaluated concerning threading defects along the 0001 direction. Finally, a comparison between laterally grown 4H, 6H-silicon carbide and a commercial 4H-silicon carbide wafer is demonstrated, and shows that this growth technique makes it possible to enlarge seed crystals without screw dislocations and micropipes along the 0001 direction.
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| 2. |
- Jacobson, H., et al.
(författare)
-
Lateral enlargement of silicon carbide crystals
- 2004
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 270:1-2
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Tidskriftsartikel (refereegranskat)abstract
- A new growth technique for lateral enlargement of silicon carbide crystals is presented and evaluated. The technique is based on PVT growth but modified with respect to temperature gradients and geometry as compared to conventional setup. Simulation of the temperature distribution for lateral growth as well as the growth mechanism is discussed. High-resolution X-ray diffraction and synchrotron white beam X-ray topography have been evaluated concerning structural defects. The results show that this growth technique makes it possible to enlarge seed crystals without threading screw dislocations and micropipes along the 0001 direction, but stacking faults are introduced due to the crystal stacking sequence along the <11¯00> directions. © 2004 Elsevier B.V.
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| 3. |
- Raback, P, et al.
(författare)
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Considerations on the crystal morphology in the sublimation growth of SiC
- 2000
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Ingår i: Materials Science Forum, Vols. 338-343. - : Trans Tech Publications Inc.. - 9780878498543 - 0878498540 ; , s. 95-98
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Konferensbidrag (refereegranskat)abstract
- In this paper the shape evolution of SiC source and seed is studied with simulations. Some basic geometries and temperature distributions are investigated. Also the condition for stable growth is discussed.
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| 4. |
- Yakimova, Rositsa, et al.
(författare)
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Growth of silicon carbide : Process-related defects
- 2001
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Ingår i: Appl. Surf. Sci., Vol. 184. ; , s. 27-36
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Konferensbidrag (refereegranskat)abstract
- This paper reviews the present understanding of defect formation and development in relation to process conditions in 4H-SiC crystal growth and epitaxy. The polytype uniformity during seeded sublimation growth of SiC boules has been discussed. Insight into different structural imperfections has been attempted. The role of the temperature distribution, as well as of the quality of seed/crystal interface in the occurrence of grown-in defects has been demonstrated. Micropipe termination by liquid-phase deposition along with defect evolution in subsequently grown layers due to rough interface has been addressed. Finally, a relation between extended morphological defects in thick (50-100 µm) 4H-SiC epitaxial layers and local stress in the material has been suggested. Optimised growth conditions to reduce the overall defect density have been proposed. © 2001 Elsevier Science B.V. All rights reserved.
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