| 1. |
- Beck, Marc, et al.
(författare)
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Improving stamps for 10 nm level wafer scale nanoimprint lithography
- 2002
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Ingår i: Microelectronic Engineering. - 1873-5568. ; 61-2, s. 441-448
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Tidskriftsartikel (refereegranskat)abstract
- The smaller the features on the stamp the more important are the interactions between stamp and polymer layer. A stamp rich in small structures will effectively show a surface area enlargement, which generally leads to adhesion of the polymer to the stamp. This makes a subsequent imprint impossible without troublesome and time-consuming cleaning. The anti-adhesion properties of Si- or SiO2-based stamps can be improved by binding fluorinated silanes covalently to the surface. In this paper, we demonstrate that the deposition procedure as well as the environment during deposition are important with respect to the quality and performance of the molecular layer. (C) 2002 Published by Elsevier Science B.V.
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| 2. |
- Carlberg, Patrick, et al.
(författare)
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Lift-off process for nanoimprint lithography
- 2003
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Ingår i: Microelectronic Engineering. - 1873-5568 .- 0167-9317. ; 67-8, s. 203-207
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Konferensbidrag (refereegranskat)abstract
- We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented.
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| 3. |
- Carlberg, Patrick, et al.
(författare)
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Nanoimprint - a tool for realizing nano-bio research
- 2004
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Ingår i: 2004 4th IEEE Conference on Nanotechnology. - 0780385365 ; , s. 199-200
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Konferensbidrag (refereegranskat)abstract
- In this paper, we present a status report on how implementation of nanoimprint lithography has advanced our research. Contact guidance nerve growth experiments have so far primarily been done on micrometer-structured surfaces. We have made a stamp with 17 areas of different, submicron, line width and spacing covering a total 2.6 mm
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| 4. |
- Carlberg, Patrick, et al.
(författare)
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Nanoimprint in mr-L 6000.1 XP/PMMA resist system
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- Use of the new resist system mr-L 6000.1 XP in combination with PMMA is demonstrated to give sub-100 nm resolution in nanoimprint lithography. Low glass transition temperature in combination with high plasma stability makes this resist suitable for achieving desirable resist profiles after the imprint process. Imprint conditions for mr-L 6000.1 XP/PMMA resist system as well as imprint results are described and discussed
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| 5. |
- Finder, C, et al.
(författare)
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Fluorescence microscopy for quality control in nanoimprint lithography
- 2003
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Ingår i: Microelectronic Engineering (Proceedings of the 28th International Conference on Micro- and Nano-Engineering). - 0167-9317 .- 1873-5568. ; 67-8, s. 623-628
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Konferensbidrag (refereegranskat)abstract
- Fluorescence microscopy is introduced as a low cost quality control process for nanoimprint lithography. To depict imprinted structures down to 1 mum lateral size and to detect residues down to 100 nm lateral size, the standard printable polymer mr-18000 is labelled with less than 0.1 wt.% fluorescent dye. Three different types of stamps are used to determine the dependence of the shape and size of stamp features in a series of imprints. The quality of a stamp is given by the sticking polymer residues per unit area. Fluorescence light images as well as visible light images are analysed. Changes in the area of the stamp covered with polymer as a function of the number of imprints is summarised in a statistical process chart. Adhesion was artificially induced in order to observe self cleaning of virgin stamps. They were detected and monitored, suggesting that this method is a suitable technique for quality control and that it could be easily adapted to the nanoimprint process. (C) 2003 Elsevier Science B.V. All rights reserved.
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| 6. |
- Ghatnekar-Nilsson, Sara, et al.
(författare)
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Fabrication and mechanical characterization of ultrashort nanocantilevers
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 83:5, s. 990-992
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Tidskriftsartikel (refereegranskat)abstract
- Three aspects on nanocantilevers are presented in this letter. First, we present the fabrication process of 2 mum long freestanding chromium cantilevers with width 150 nm, and thickness 50 nm. Second, a measurement scheme using an atomic force microscope operating in contact mode was employed to study the mechanical properties along the length of the cantilevers. Third, we have investigated extremely large deflections on these nanoscale cantilevers demonstrating their high ductility. The spring constants calculated from the experimental data are smaller than expected from classical mechanics calculations, but show good agreement with previously reported calculations for largely deflected beams. (C) 2003 American Institute of Physics.
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| 7. |
- Maximov, Ivan, et al.
(författare)
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Fabrication of Si-based nanoimprint stamps with sub-20 nm features
- 2002
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Ingår i: MICROELECTRONIC ENGINEERING. - 1873-5568 .- 0167-9317. ; 61-2, s. 449-454
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Konferensbidrag (refereegranskat)abstract
- We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of stamp fabrication are compared and discussed. (C) 2002 Published by Elsevier Science B.V.
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| 8. |
- Maximov, Ivan, et al.
(författare)
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Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
- 2003
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Ingår i: Microelectronic Engineering. - 1873-5568. ; 67-8, s. 196-202
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Tidskriftsartikel (refereegranskat)abstract
- We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
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| 9. |
- Montelius, Lars, et al.
(författare)
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Next generation nanotechnologies for sensor array fabrication
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- New emerging technologies such as nanoimprint lithography (NIL) offers the biosensor research community the possibility to fabricate low-cost biodevices having nanometer dimensions. Such nanosized devices can be applied as biosensors where new functions might emerge due to the nanoscale dimensions. In this paper we will discuss various nanolithography methods as well as the benefits of going to the nanoscale for biosensor applications. We will also show results from mixed NIL and UV-lithography for fabrication of interdigitated nanobiosensor electrodes on up to 6'' large Si wafers. The electrode and inter-electrode distances were 100 nm wide over a total area of 200 μm×200 μm. We will also show the obtained enhanced efficiency of redox-recycling when utilizing such nanoscaled biosensors
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| 10. |
- Timmers, H, et al.
(författare)
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Threshold stoichiometry for beam induced nitrogen depletion of SiN
- 2002
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. - 0168-583X. ; 190, s. 428-432
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Tidskriftsartikel (refereegranskat)abstract
- Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species. the beam energy, and the initial stoichiometry. A threshold stoichiometry exists in the range 1.3 > N/Si greater than or equal to 1, below which the films are stable against nitrogen depletion. Above this threshold, depletion is essentially linear with incident fluence. The depletion rate correlates non-linearly with the electronic energy loss of the projectile ion in the film. Sufficiently long exposure of nitrogen-rich films renders the mechanism, which prevents depletion of nitrogen-poor films, ineffective. Compromising depth-resolution. nitrogen depletion from SiN films during ERD analysis can be reduced significantly by using projectile beams with low atomic numbers. (C) 2002 Published by Elsevier Science B.V.
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