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Low-temperature mol...
Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates
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- Zhao, Ming (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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- Ni, Wei- Xin (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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- Townsend, P (author)
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
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- Lynch, S. A. (author)
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
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- Paul, D. J. (author)
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
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- Chang, M. N. (author)
- National Nano Device Laboratories, Taiwan
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- Hsu, C. C. (author)
- National Nano Device Laboratories, Taiwan
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(creator_code:org_t)
- Elsevier BV, 2006
- 2006
- English.
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In: Thin Solid Films. - : Elsevier BV. - 0040-6090. ; 508:1-2, s. 24-28
- Related links:
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http://urn.kb.se/res...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Si/SiGe quantum cascade structures containing superlattice up to 100 periods have been grown on SiGe virtual substrates by using solid-source molecular beam epitaxy at low temperature. The surface morphology and structural properties of the grown samples were characterized using various experimental techniques. It has been concluded that the structures were completely symmetrically strained with high crystalline quality, precise layer parameters, and excellent reproducibility. Electroluminescence was observed with peaked intensity at 3 THz at both 4 and 40 K, which agrees very well with expected interwell intersubband transition according to the design.
Keyword
- Molecular beam epitaxy (MBE); Si/SiGe; Quantum cascade; X-ray diffraction
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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