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Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission

Zhao, Ming (author)
Linköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik
Karim, Amir (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
Hansson, Göran (author)
Linköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik
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Ni, Wei-Xin (author)
Linköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik
Townsend, P (author)
University of Cambridge
Lynch, S A (author)
University of Cambridge
Paul, D J (author)
University of Cambridge
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 (creator_code:org_t)
Elsevier BV, 2008
2008
English.
In: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 517:1, s. 34-37
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • A Si/SiGe bound-to-continuum quantum cascade design for THz emission was grown using solid-source molecular beam epitaxy on Si0.8Ge0.2 virtual substrates. The growth parameters were carefully studied and several samples with different boron doping concentrations were grown at optimized conditions. Extensive material characterizations revealed a high crystalline quality of the grown structures with an excellent growth control. Layer undulations resulting from a nonuniform strain field, introduced by high doping concentration, were observed. The device characterizations suggested that a modification on the design was needed in order to enhance the THz emission.

Keyword

Molecular beam epitaxy (MBE)
Si/SiGe
Quantum cascade
X-ray diffraction
Transmission electron microscopy (TEM)
NATURAL SCIENCES
NATURVETENSKAP

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