Substrate orientation : A way towards higher quality monolayer graphene growth on 6H-SiC(0001)

• The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03 degrees) than on those with a larger (0.25 degrees). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene-SiC structures.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Keyword

Graphene

Silicon carbide

Carbon

Low-energy electron microscopy (LEEM)

Low-energy electron diffraction (LEED)

Scanning tunneling microscopy (STM)

NATURAL SCIENCES

NATURVETENSKAP

Publication and Content Type

ref (subject category)

art (subject category)