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Investigation of me...
Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE
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- Song, Yuxin, 1981 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Wang, Shu Min, 1963 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Xiaohui, Cao (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lai, Zonghe, 1948 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sadeghi, Mahdad, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- Elsevier BV, 2011
- 2011
- English.
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In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 323:1, s. 21-25
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https://doi.org/10.1...
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Abstract
Subject headings
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- Strong enhancement of photoluminescence intensity from InGaAs quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates was demonstrated and investigated. The enhancement of photoluminescence intensity is found to be from both the weak strain effect and the strong lattice hardening effect, indicating blocking effect of threading dislocations due to the N incorporation. Combination of this method with a strain compensated superlattice was proved to be effective in obtaining good quality metamorphic InGaAs quantum wells.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Dislocations
- Molecular beam epitaxy
- Semiconducting III-V materials
Publication and Content Type
- art (subject category)
- ref (subject category)
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