Atomic Layer Deposition of NiO by the Ni(thd)2/H2O Precursor Combination

• Polycrystalline nickel oxide is deposited on SiO2 substrates by   alternating pulses of   bis(2,2,6,6-tetramethylheptane-3,5-dionato)nickel(II) (Ni(thd)(2)) and   H2O. The deposition process shows atomic layer deposition (ALD)   characteristics with respect to the saturation behavior of the two   precursors at deposition temperatures up to 275 degrees C. The growth   of nickel oxide is shown to be highly dependent on surface hydroxide   groups, and a large excess of H2O is required to achieve saturation.   Throughout the deposition temperature range the amount of carbon in the   film, originating from the metal precursor ligand, is in the range   1-2%. Above 275 degrees C ALD growth behavior is lost in favor of   thermal decomposition of the metal precursor. The initial nucleation   process is studied by atomic force microscopy (AFM) and reveals   nucleation of well-separated grains which coalesce to a continuous film   after about 250 ALD cycles.

Ämnesord

NATURVETENSKAP  -- Kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences (hsv//eng)

Nyckelord

ALD

growth rate

morphology

nickel oxide

Ni(thd)(2)

Chemistry

Kemi

Inorganic Chemistry

Oorganisk kemi

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