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Microwave properties of tunable capacitors basee on magnetron sputtered ferroelectric Na0.5K0.5NbO3 film on low and high resistivity silicon substrates

Abadei, S. (author)
Department of Microelectronics, Chalmers University of Technology, 412 96 Göteborg, Sweden,Chalmers tekniska högskola,Chalmers University of Technology
Gevorgian, Spartak, 1948 (author)
Department of Microelectronics, Chalmers University of Technology, 412 96 Göteborg, Sweden, Core Unit Research Center, Ericsson Microwave Systems, SE-431 84, Mölnda, Sweden,Chalmers tekniska högskola,Chalmers University of Technology
Kugler, Veronika Mozhdeh (author)
Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi,Department of Physics, Linköping University
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Helmersson, Ulf (author)
Linköpings universitet,Tekniska högskolan,Plasma och ytbeläggningsfysik,Department of Physics, Linköping University
Andreasson, J. (author)
Luleå tekniska universitet,Institutionen för teknikvetenskap och matematik,Department of Materials and Manufacturing Engineering, Luleå University of Technology, 971 87, Luleå, Sweden
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 (creator_code:org_t)
2006-09-03
2001
English.
In: Integrated Ferroelectrics. - : Informa UK Limited. - 1058-4587 .- 1607-8489. ; 39:1-4, s. 359-366
  • Conference paper (other academic/artistic)
Abstract Subject headings
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  • In this work, small signal DC voltage dependent dielectric permittivity, loss tangent, and tuneability of magnetron sputtered epitaxial Na0.5K0.5NO3 films are studied experimentally. (100)-oriented Na0.5K0.5NbO3 films are deposited onto SiO2-buffered CMOS grade low resistivity (p = 10-20 cm) and high resistivity (p = 15-45 kcm) silicon substrates. Planar capacitors with 2 or 4 m gaps between electrodes have been fabricated on top of ferroelectric films. These devices have been characterized in the frequency range 1.0 MHz to 50 GHz at temperatures 30 - 300K. Na0.5K0.5NbO3/SiO2/Si structures on high resistivity silicon substrate exhibit C-V performances typical for Metal-Insulator- Semiconductor (MIS) capacitors. At low frequencies, f 1.0 GHz, the large tuneability and large losses are associated with the MIS structure, while at higher microwave frequencies the tuneability is mainly associated with the ferroelectric, film. At 1.0 MHz and room temperature, the tuneability of Na0.5K0.5NbO3/SiO2/Si structures more than 90%, reducing to 10-15 % at 50 GHz. The losses decrease with increasing the DC bias and frequency. A Q-factor more than 15 at 50 GHz is observed. The dielectric permittivity of the Na0.5K0.5NbO3 film is in the range 50-150 at frequencies 0.045-50 GHz. On low resistivity substrate the performance of Na0.5K0.5NbO3 films is completely screened by the high losses in silicon, and the tuneability is negligible. © 2001 Taylor and Francis.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Annan materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Other Materials Engineering (hsv//eng)

Keyword

Dielectric permittivity
Ferroelectric
Microwave loss
Na 0.5K0.5NbO3
Tuneability
TECHNOLOGY
TEKNIKVETENSKAP
Engineering Materials

Publication and Content Type

vet (subject category)
kon (subject category)

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