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WFRF:(Palsson G. K.)
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Electronic structure of the dilute magnetic semiconductor Ga1-xMnxP from hard x-ray photoelectron spectroscopy and angle-resolved photoemission
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- Keqi, A. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
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- Gehlmann, M. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany
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- Conti, G. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
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- 2018
- 2018
- Engelska.
- Ingår i: Physical Review B. - 2469-9950 .- 2469-9969. ; 97:15
- Tidskriftsartikel (refereegranskat)
Abstract
Ämnesord
Stäng
- We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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- Keqi, A.
- Gehlmann, M.
- Conti, G.
- Nemsak, S.
- Rattanachata, A.
- Minar, J.
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- Plucinski, L.
- Rault, J. E.
- Rueff, J. P.
- Scarpulla, M.
- Hategan, M.
- Pálsson, Gunnar ...
- Conlon, C.
- Eiteneer, D.
- Saw, A. Y.
- Gray, A. X.
- Kobayashi, K.
- Ueda, S.
- Dubon, O. D.
- Schneider, C. M.
- Fadley, C. S.
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