Epitaxy of copper on α-Al2O3(0 0 1) by atomic layer deposition

• A combined X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) study have been carried out on copper films grown by atomic layer deposition at 400 °C. The copper films have been grown on single crystalline (0 0 1) oriented α-Al2O3 up to a thickness of 500 nm. The films were relaxed and the diffraction peak broadening in 2θ was mainly dependent on the copper grain size. Broadening of the diffraction peaks in ω was found to be related to defects (mosaicity and intrinsic microstrain). The deposited films were epitaxial and grew with the (1 1 1) plane in parallel to the substrate surface. Extensive twinning in the copper grains in different Cu1 1 1 directions occurred according to the TEM study, both in directions perpendicular to the substrate surface ([1 1 1] and ) and along other 1 1 1 directions as well. As an effect of a twin, an extra Cu(5 1 1) orientation was present in the XRD data.

Ämnesord

NATURVETENSKAP  -- Kemi -- Oorganisk kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)

Nyckelord

Epitaxial

Atomic layer epitaxy

Copper

Sapphire

Inorganic chemistry

Oorganisk kemi

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