Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening

• Resonant tunneling through a single layer of self-assembled quantum dots (QDs) as well as tunneling through two layers of vertically aligned (stacked) dots is investigated. The difference between single and double layers of QDs can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. By fabricating small-area devices we are able to probe single stacks of quantum dots, revealing details of the coupling between the stacked dots. Very sharp resonances, with peak-to-valley ratios of several hundred, have been measured in the current-voltage characteristics. We also show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analysed in a resonant tunneling experiment

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

resonance

stacked dots

single stacks

small area devices

zero-dimensional emitter

two-dimensional emitter

vertically aligned dots

inhomogeneous broadening

QD

resonant tunneling

coupled self-assembled quantum dots

peak-valley ratios

current-voltage characteristics

statistical size distribution

luminescence experiments

InAs-InP

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