Photon mapping of single quantum dots by scanning tunneling microscopy induced luminescence spectroscopy

• Scanning tunneling microscopy induced luminescence (STML) has been used to investigate individual self-assembled InP quantum dots overgrown with GaInP. We will present results correlating the surface morphology with the optical properties of single dots. In particular, the strain induced energy-shift of the dot emission with increasing cap layer thickness and its relation to the overgrowth will be discussed. Effects of the dots on the properties of the overgrown GaInP will also be treated. STML spectra and monochromatic photon maps are compared with results from photoluminescence and transmission electron microscopy measurements. Furthermore, a comparison with theoretical calculations is made

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

single quantum dots

Photon mapping

scanning tunneling microscopy

luminescence spectroscopy

self-assembled InP quantum dots

optical properties

surface morphology

strain induced energy-shift

increasing cap layer thickness

STML spectra

dot emission

photon maps

transmission electron microscopy

GaInP

photoluminescence

Publikations- och innehållstyp

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