Direct observation of lateral carrier diffusion in ridge waveguide 1.3 um GaInNAs-GaAs lasers using scanning near-field optical microscopy

• Scanning near-field optical microscopy measurements of the lateral spontaneous emission profile for narrow ridge waveguide 1.3 um GaInNAs-GaAs lasers reveal significant lateral carrier diffusion, which can explain the high characteristic temperature of the threshold current.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

Nyckelord

SNOM

semiconductor lasers

InGaNAs

characteristic temperature

lateral carrier diffusion

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)