Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces

• Multiparameter admittance spectroscopy (MPAS) measurements have been performed on Al/HfO2/SiOx/Si structures before and after post metallization annealing (PMA). Contour plots of conductance data as a function of the logarithm of inverted signal frequency and applied voltage as obtained by MPAS are compared with standard capacitance versus voltage (C–V) data demonstrating the advantage of MPAS as a diagnostic tool. MPAS reveals more detailed properties of oxide/semiconductor interface states and renders measured data for better perceptiveness.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Reglerteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Control Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

high–k material

MOS

conductance method

interface states

admittance

Publikations- och innehållstyp

art (ämneskategori)

ref (ämneskategori)