Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications

• We present a GaAs-based VCSEL structure, BCB bonded to a Si3N4 waveguide circuit, where one DBR is substituted by a free-standing Si3N4 high-contrast-grating (HCG) reflector realized in the Si3N4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si3N4 HCG with 800nm period and 40% duty cycle reflects strongly (

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Bearbetnings-, yt- och fogningsteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Manufacturing, Surface and Joining Technology (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Kommunikationssystem (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Communication Systems (hsv//eng)

Nyckelord

silicon photonics

high contrast grating

vertical cavity surface emitting laser

silicon nitride waveguide

integration

Publikations- och innehållstyp

kon (ämneskategori)

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