A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy

Tångring, Ivar,1978Chalmers tekniska högskola,Chalmers University of Technology (författare)

We investigate the role of p- and n-type doping in strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy. It is found that p-type Be-doping can improve material properties, resulting in smaller surface roughness and lower threading dislocation density, while n-type Si-doping has an opposite effect. The effect is strongly dependent on the grading profile, with linear grading showing small differences, while there is a significant difference when an exponential grading is used. Since doping is essential for many types of devices, these results are useful for improving the material properties and performance of metamorphic devices.

Song, Yuxin,1981Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)yuxin (författare)
Lai, Zonghe,1948Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)zonghe (författare)
Wang, Shu Min,1963Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)shumin (författare)
Sadeghi, Mahdad,1964Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)mahdad (författare)
Larsson, Anders,1957Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)andersla (författare)
Chalmers tekniska högskola (creator_code:org_t)

Av författaren/redakt...: Tångring, Ivar, ...; Song, Yuxin, 198 ...; Lai, Zonghe, 194 ...; Wang, Shu Min, 1 ...; Sadeghi, Mahdad, ...; Larsson, Anders, ...

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