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Dilute bismides for near and mid-infrared applications

Song, Yuxin, 1981 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Gu, Y. (author)
Chinese Academy of Sciences
Ye, Hong, 1987 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Shi, P. (author)
Danmarks Tekniske Universitet,Technical University of Denmark
Hallén, Anders (author)
KTH,Integrerade komponenter och kretsar,Kungliga Tekniska Högskolan (KTH),Royal Institute of Technology (KTH)
Chen, X. (author)
Chinese Academy of Sciences
Shao, J. (author)
Chinese Academy of Sciences
Wang, Shu Min, 1963 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
ISBN 9781479906826
2013
2013
English.
In: 2013 15th International Conference on Transparent Optical Networks (ICTON). - 2162-7339. - 9781479906826 ; , s. 6602735-
  • Conference paper (peer-reviewed)
Abstract Subject headings
Close  
  • Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III-V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Keyword

dilute bismide
GaSbBi
infrared
InGaAsBi
InSbBi
MBE

Publication and Content Type

ref (subject category)
kon (subject category)

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