Sökning: onr:"swepub:oai:research.chalmers.se:3d25bf90-5db6-44d1-b654-d7115d60393d" >
Point defect balanc...
Point defect balance in epitaxial GaSb
-
- Segercrantz, N. (författare)
- Aalto-Yliopisto,Aalto University
-
- Slotte, J. (författare)
- Aalto-Yliopisto,Aalto University
-
- Makkonen, I. (författare)
- Aalto-Yliopisto,Aalto University
-
visa fler...
-
- Kujala, J. (författare)
- Aalto-Yliopisto,Aalto University
-
- Tuomisto, F. (författare)
- Aalto-Yliopisto,Aalto University
-
- Song, Yuxin, 1981 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chinese Academy of Sciences
-
- Wang, Shu Min, 1963 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
visa färre...
-
(creator_code:org_t)
- AIP Publishing, 2014
- 2014
- Engelska.
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 105:8, s. art. no. 082113-
- Relaterad länk:
-
http://publications.... (primary) (free)
-
visa fler...
-
http://publications....
-
https://research.cha...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas