Sökning: onr:"swepub:oai:DiVA.org:liu-50083" > Toward silicon-base...
Fältnamn | Indikatorer | Metadata |
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000 | 04335naa a2200637 4500 | |
001 | oai:DiVA.org:liu-50083 | |
003 | SwePub | |
008 | 091011s2006 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-500832 URI |
024 | 7 | a https://doi.org/10.1109/JSTQE.2006.8840692 DOI |
040 | a (SwePub)liu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Lynch, S.A.u IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom4 aut |
245 | 1 0 | a Toward silicon-based lasers for terahertz sources |
264 | 1 | c 2006 |
338 | a print2 rdacarrier | |
520 | a Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser. © 2006 IEEE. | |
653 | a Boron | |
653 | a Far infrared | |
653 | a Germanium | |
653 | a Impurity | |
653 | a Lifetime | |
653 | a Phosphorus | |
653 | a Pump-probe | |
653 | a Quantum cascade laser | |
653 | a Resonant tunneling diode (RTD) | |
653 | a Silicon | |
653 | a Suicide | |
653 | a Terahertz | |
653 | a Waveguide | |
653 | a TECHNOLOGY | |
653 | a TEKNIKVETENSKAP | |
700 | 1 | a Paul, D.J.u IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom4 aut |
700 | 1 | a Townsend, P.u IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom4 aut |
700 | 1 | a Matmon, G.u IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom4 aut |
700 | 1 | a Suet, Z.u IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom4 aut |
700 | 1 | a Kelsall, R.W.u School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom4 aut |
700 | 1 | a Ikonic, Z.u School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom4 aut |
700 | 1 | a Harrison, P.u School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom4 aut |
700 | 1 | a Zhang, J.u Blackett Laboratory, Imperial College, London SW7 2AZ, United Kingdom4 aut |
700 | 1 | a Norris, D.J.u School of Electronics and Electrical Engineering, University of Sheffield, Sheffield S10 2TN, United Kingdom4 aut |
700 | 1 | a Cullis, A.G.u School of Electronics and Electrical Engineering, University of Sheffield, Sheffield S10 2TN, United Kingdom4 aut |
700 | 1 | a Pidgeon, C.R.u Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom4 aut |
700 | 1 | a Murzyn, P.u Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom4 aut |
700 | 1 | a Murdin, B.u School of Electronics and Physical Sciences, University of Surrey, Surrey GU2 7XH, United Kingdom4 aut |
700 | 1 | a Bain, M.u School of Electrical and Electronic Engineering, Queens University, Belfast BT9 5AH, United Kingdom4 aut |
700 | 1 | a Gamble, H.S.u School of Electrical and Electronic Engineering, Queens University, Belfast BT9 5AH, United Kingdom4 aut |
700 | 1 | a Zhao, Mingu Linköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik4 aut0 (Swepub:liu)minzh44 |
700 | 1 | a Ni, Wei-Xinu Linköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik4 aut0 (Swepub:liu)weini41 |
710 | 2 | a IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdomb School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom4 org |
773 | 0 | t IEEE Journal of Selected Topics in Quantum Electronicsg 12:6, s. 1570-1577q 12:6<1570-1577x 1077-260Xx 1558-4542 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-50083 |
856 | 4 8 | u https://doi.org/10.1109/JSTQE.2006.884069 |
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