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Sökning: onr:"swepub:oai:DiVA.org:liu-50083" > Toward silicon-base...

LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00004335naa a2200637 4500
001oai:DiVA.org:liu-50083
003SwePub
008091011s2006 | |||||||||||000 ||eng|
024a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-500832 URI
024a https://doi.org/10.1109/JSTQE.2006.8840692 DOI
040 a (SwePub)liu
041 a engb eng
042 9 SwePub
072 7a ref2 swepub-contenttype
072 7a art2 swepub-publicationtype
100a Lynch, S.A.u IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom4 aut
2451 0a Toward silicon-based lasers for terahertz sources
264 1c 2006
338 a print2 rdacarrier
520 a Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser. © 2006 IEEE.
653 a Boron
653 a Far infrared
653 a Germanium
653 a Impurity
653 a Lifetime
653 a Phosphorus
653 a Pump-probe
653 a Quantum cascade laser
653 a Resonant tunneling diode (RTD)
653 a Silicon
653 a Suicide
653 a Terahertz
653 a Waveguide
653 a TECHNOLOGY
653 a TEKNIKVETENSKAP
700a Paul, D.J.u IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom4 aut
700a Townsend, P.u IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom4 aut
700a Matmon, G.u IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom4 aut
700a Suet, Z.u IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom4 aut
700a Kelsall, R.W.u School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom4 aut
700a Ikonic, Z.u School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom4 aut
700a Harrison, P.u School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom4 aut
700a Zhang, J.u Blackett Laboratory, Imperial College, London SW7 2AZ, United Kingdom4 aut
700a Norris, D.J.u School of Electronics and Electrical Engineering, University of Sheffield, Sheffield S10 2TN, United Kingdom4 aut
700a Cullis, A.G.u School of Electronics and Electrical Engineering, University of Sheffield, Sheffield S10 2TN, United Kingdom4 aut
700a Pidgeon, C.R.u Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom4 aut
700a Murzyn, P.u Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom4 aut
700a Murdin, B.u School of Electronics and Physical Sciences, University of Surrey, Surrey GU2 7XH, United Kingdom4 aut
700a Bain, M.u School of Electrical and Electronic Engineering, Queens University, Belfast BT9 5AH, United Kingdom4 aut
700a Gamble, H.S.u School of Electrical and Electronic Engineering, Queens University, Belfast BT9 5AH, United Kingdom4 aut
700a Zhao, Mingu Linköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik4 aut0 (Swepub:liu)minzh44
700a Ni, Wei-Xinu Linköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik4 aut0 (Swepub:liu)weini41
710a IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdomb School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom4 org
773t IEEE Journal of Selected Topics in Quantum Electronicsg 12:6, s. 1570-1577q 12:6<1570-1577x 1077-260Xx 1558-4542
8564 8u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-50083
8564 8u https://doi.org/10.1109/JSTQE.2006.884069

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