The influence of gain nonlevearities on distortion in semiconductor lasers

• The modulation response and second harmonic distortion was analyzed for different gain models and compared with exact integral gain models. It was shown that if we modulate the laser around steady state with a signal, it would induce carrier and photon fluctuations. The second order distortion depended on the carrier and photon modulation response, the internal mixing process determined by the Hessian matrix creating a fictive injection signal and the carrier and photon modulation response at intermodulation frequency. It was found that the approximate model has a reasonable good agreement with an exact comprehensive gain model at all frequencies and pumping currents.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Bandwidth

Computational methods

Distortion (waves)

Gain control

Matrix algebra

Nonlinear optics

Optoelectronic devices

Photons

Internal mixing

Photon fluctuations

Pumping currents

Second harmonic distortion

Semiconductor lasers

Publikations- och innehållstyp

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