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Passivation of p-ty...
Passivation of p-type dopants in 4H-SiC by hydrogen
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- Aradi, B. (författare)
- Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary
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- Gali, Adam (författare)
- Department of Atomic Physics, Budapest Univ. of Technol./Economics, Budafoki út 8, H-1111 Budapest, Hungary
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- Deak, P. (författare)
- Deák, P., Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary
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- Nguyen, Tien Son (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Janzén, Erik (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary Department of Atomic Physics, Budapest Univ of Technol./Economics, Budafoki út 8, H-1111 Budapest, Hungary (creator_code:org_t)
- 2001
- 2001
- Engelska.
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Ingår i: Physica B, Vols. 308-310. ; , s. 722-725
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Experimental investigations showed passivation of the p-type dopants B and Al in 4H-SiC by the formation of B+H and Al+H complexes. The dissociation energies of these complexes differed by 0.9 eV. Ab initio supercell calculations have been performed to investigate the interaction of H with B and Al in hexagonal 4H-SiC. The total energy, geometry and electronic structure of the possible complexes have been determined. Site dependencies have also been investigated. The most stable configurations were found with H at a bond center site next to B at the Si site, and with H at the antibonding site of a carbon atom which is first neighbor to Al at a Si site. Both the BSi+HBC and the AlSi+HAB(C) complexes turned out to be electrically inactive. The different structure of the passivated complexes explains the observed difference in their dissociation energy: the calculated difference of the binding energies of these complexes is 0.9 eV, which agrees well with the experimental finding. © 2001 Elsevier Science B.V. All rights reserved.
Nyckelord
- Aluminum
- Boron
- Hydrogen
- Passivation
- SiC
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)