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Reststrahlen Band assisted photocurrents in graphene

Drexler, C. (author)
Universität Regensburg,University of Regensburg
Golub, L.E. (author)
Russian Academy of Sciences
Danilov, S.N. (author)
Universität Regensburg,University of Regensburg
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Shalygin, V.A. (author)
Olbrich, P. (author)
Universität Regensburg,University of Regensburg
Huber, R. (author)
Universität Regensburg,University of Regensburg
Yakimova, R. (author)
Linköpings universitet,Linköping University
Lara Avila, Samuel, 1983 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Kubatkin, Sergey, 1959 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Redlich, B. (author)
Ganichev, S.D. (author)
Universität Regensburg,University of Regensburg
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 (creator_code:org_t)
ISBN 9781467347174
2013
2013
English.
In: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - 2162-2027 .- 2162-2035. - 9781467347174
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • We report on the experimental and theoretical study of the Reststrahlen Band assisted photocurrents in epitaxial grown graphene on SiC. We show that excitation of graphene with infrared radiation results in a dc current. We demonstrate that photocurrent in response to linearly polarized radiation exhibit a resonance enhancement in the frequency range of the Reststrahlen Band of the SiC substrate. By contrast the photocurrent excited by circularly polarized radiation is suppressed in the same spectral range. The developed theory is in agreement with the data and reveals a strong influence of the Reststrahl Band on the high frequency transport in graphene.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

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kon (subject category)
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