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High-Performance Ve...
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
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- Kilpi, Olli Pekka (författare)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups
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- Hellenbrand, Markus (författare)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups
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- Svensson, Johannes (författare)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups
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- Persson, Axel R. (författare)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
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- Wallenberg, Reine (författare)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
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- Lind, Erik (författare)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Nanoelektronik,Forskargrupper vid Lunds universitet,Other operations, LTH,Faculty of Engineering, LTH,Nano Electronics,Lund University Research Groups
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- Wernersson, Lars Erik (författare)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups
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(creator_code:org_t)
- 2020
- 2020
- Engelska 4 s.
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 41:8, s. 1161-1164
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Vertical III-V nanowire MOSFETs have demonstrated excellent performance including high transconductance and high Ion. One main bottleneck for the vertical MOSFETs is the large access resistance arising from the contacts and ungated regions. We demonstrate a process to reduce the access resistance by combining a gate-last process with ALD gate-metal deposition. The devices demonstrate fully scalable gm down to Lg = 25 nm. These vertical core/shell InAs/InGaAs MOSFETs demonstrate gm = 3.1 mS/μm and Ron = 190 Ωμm. This is the highest gm demonstrated on Si. Transmission line measurement verifies a low contact resistance with RC = 115 Ωμm, demonstrating that most of the MOSFET access resistance is located in the contact regions.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- InAs
- InGaAs
- MOSFET
- nanowire
- TLM
- Vertical
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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