The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV I ion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 1011 ions/cm2. It is observed that even the ion fluences in the 109 ions/cm2 range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW’s in radiation-rich environments, in addition to defect build-up during ion beam analysis.
Svensk, OlleHelsinki University of Technology (TKK), Micronova, Department of Micro and Nanosciences, P.O. Box 3500, FIN-02015 TKK, Finland
(författare)
Zhen, Z.Helsinki University of Technology (TKK), Micronova, Department of Micro and Nanosciences, P.O. Box 3500, FIN-02015 TKK, Finland
(författare)
Suihkonen, S.Helsinki University of Technology (TKK), Micronova, Department of Micro and Nanosciences, P.O. Box 3500, FIN-02015 TKK, Finland
(författare)
Törmä, P. T.Helsinki University of Technology (TKK), Micronova, Department of Micro and Nanosciences, P.O. Box 3500, FIN-02015 TKK, Finland
(författare)
Lipsanen, H.Helsinki University of Technology (TKK), Micronova, Department of Micro and Nanosciences, P.O. Box 3500, FIN-02015 TKK, Finland
(författare)
Sopanen, M.Helsinki University of Technology (TKK), Micronova, Department of Micro and Nanosciences, P.O. Box 3500, FIN-02015 TKK, Finland
(författare)
Hjort, Klas,1964-Uppsala universitet,Mikrosystemteknik,Department of Engineering Sciences, Uppsala University, P.O. Box 534, SE-75121 Uppsala, Sweden(Swepub:uu)klashjor
(författare)
Helsinki University of Technology (TKK), Micronova, Department of Micro and Nanosciences, P.O. Box 3500, FIN-02015 TKK, FinlandMikrosystemteknik
(creator_code:org_t)
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Ingår i:Physica. B, Condensed matter: Elsevier404:23-24, s. 4925-49280921-45261873-2135