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Sökning: onr:"swepub:oai:research.chalmers.se:06856d31-53fc-4d5f-9260-6f93fac8f1a5" > Application of two-...

Application of two-dimensional layered hexagonal boron nitride in chip cooling

Bao, Jie (författare)
Shanghai University, China
Zhang, Y. (författare)
Shanghai University, China,Chalmers University of Technology,Chalmers tekniska högskola
Huang, S. (författare)
Shanghai University, China
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Sun, Shuangxi, 1986 (författare)
Chalmers University of Technology,Chalmers tekniska högskola
Lu, X. (författare)
Shanghai University, China
Fu, Yifeng, 1984 (författare)
Chalmers tekniska högskola,Chalmers University of Technology
Liu, Johan, 1960 (författare)
Chalmers University of Technology,Chalmers tekniska högskola
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Ingår i: Yingyong Jichu yu Gongcheng Kexue Xuebao/Journal of Basic Science and Engineering. - 1005-0930. ; 24:1, s. 210-217
  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
  • © 2016, The Editorial Board of Journal of Basic Science and Engineering. All right reserved.Research into layered hexagonal boron nitride(h-BN)has recently intensified, due to its superior physicochemical properties compared to that of a typical two-dimensional material. H-BN can be utilized in power chips as both an insulating layer as well as a heat spreader for local hotspots with high heat flux. Single layer h-BN film grown by CVD and h-BN microparticles are respectively transferred onto the surfaces of the thermal evaluation chips, where the influence of h-BN on the heat dissipation performance of the chips can be observed at different power values. The resistance-temperature curve method and infrared thermal imager are both used to measure the temperature of hotspots on the thermal evaluation chips, which can be reduced by between 3~5℃ at 1W after the transfer of h-BN. The cooling efficiency is improved and it can be found that single layer h-BN film shows better heat dissipation ability.


Boron nitride
Single layer
Thermal evaluation chip
Heat dissipation

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