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Sökning: onr:"swepub:oai:research.chalmers.se:70c79431-18e0-4c1c-9771-54d77893f6f6" > Synthesis and Appli...

Synthesis and Applications of Two-Dimensional Hexagonal Boron Nitride in Electronics Manufacturing

Bao, Jie (författare)
Shanghai University, China
Jeppson, Kjell, 1947 (författare)
Chalmers University of Technology,Chalmers tekniska högskola
Edwards, Michael, 1986 (författare)
Chalmers University of Technology,Chalmers tekniska högskola
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Fu, Yifeng, 1984 (författare)
Chalmers University of Technology,Chalmers tekniska högskola
Ye, Lilei, 1970 (författare)
Lu, Xiuzhen (författare)
Shanghai University, China
Liu, Johan, 1960 (författare)
Chalmers University of Technology,Chalmers tekniska högskola
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Ingår i: Electronic Materials Letters. - 1738-8090. ; 12:1, s. 1-16
  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
  • In similarity to graphene, two-dimensional (2D) hexagonal boron nitride (hBN) has some remarkable properties, such as mechanical robustness and high thermal conductivity. In addition, hBN has superb chemical stability and it is electrically insulating. 2D hBN has been considered a promising material for many applications in electronics, including 2D hBN based substrates, gate dielectrics for graphene transistors and interconnects, and electronic packaging insulators. This paper reviews the synthesis, transfer and fabrication of 2D hBN films, hBN based composites and hBN-based van der Waals heterostructures. In particular, this review focuses on applications in manufacturing electronic devices where the insulating and thermal properties of hBN can potentially be exploited. 2D hBN and related composite systems are emerging as new and industrially important materials, which could address many challenges in future complex electronics devices and systems.


two-dimensional hexagonal boron nitride
electronics manufacturing
van der waals heterostructures

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