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- Norling, Martin, 1981, et al.
(författare)
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A 2 GHz oscillator using a monolithically integrated AlN TFBAR
- 2008
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781424417803 ; 1:1, s. 843-846
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Konferensbidrag (refereegranskat)abstract
- A 2 GHz oscillator based on a solidly mounted AlN thin-film bulk acoustic resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon multi-chip module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a high-resistivity silicon (HRS) carrier. SiGe transistors are flip-chip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of -125 dBc/Hz at 100 kHz offset.
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